Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures

被引：67

作者：

Son, Junwoo ^{[1
]}

Chobpattana, Varistha ^{[1
]}

McSkimming, Brian M. ^{[1
]}

Stemmer, Susanne ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 10期

关键词：

AL2O3; PERFORMANCE; HEMTS; HFO2;

D O I：

10.1063/1.4751466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The location and nature of fixed charge states in high-k/GaN metal-oxide-semiconductor capacitor structures are characterized by analyzing flatband voltage shifts in high-frequency capacitance-voltage measurements. It is shown that a significant fixed, positive sheet charge forms at Al2O3/GaN interfaces, but not at HfO2/GaN interfaces. Furthermore, an interface dipole is created at HfO2/Al2O3 interfaces, which causes an abrupt shift in the flat band voltage as HfO2 is introduced to form HfO2/Al2O3 bilayer dielectrics. The observed dependence of the flatband voltage shift on the relative thicknesses of the dielectrics comprising the bilayer dielectrics is discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751466]

引用

页数：3

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