Process Variability Effect on Soft Error Rate by Characterization of Large Number of Samples

被引：10

作者：

Gasiot, Gilles ^{[1
]}

Castelnovo, Alexandro ^{[2
]}

Glorieux, Maximilien ^{[1
]}

Abouzeid, Fady ^{[1
]}

Clerc, Sylvain ^{[1
]}

Roche, Philippe ^{[1
]}

机构：

[1] STMicroelectronics, F-38926 Crolles, France

[2] STMicroelectronics, I-20864 Agrate Brianza, MB, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2012年 / 59卷 / 06期

关键词：

Neutrons; Error analysis; Semiconductor device measurement; Random access memory; Sampling methods; System-on-a-chip; Semiconductor device reliability; soft error rate (SER) experimental characterization; Alpha and neutron; die-to-die variability; hardness assurance; large sampling; process variability;

D O I：

10.1109/TNS.2012.2225447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time die-to-die soft error rate (SER) variability from process manufacturing is experimentally characterized by irradiating a very large number of samples from a single wafer. Alpha and neutron SER is measured and reported as a function of original location on wafer, test dates and samples capacity. CAD tools are then used to evaluate their capacity to assess die-to-die alpha and neutron SER variability.

引用

页码：2914 / 2919

页数：6