Monte Carlo particle-based simulation of FIBMOS: impact of strong quantum confinement on device performance

被引：2

作者：

Knezevic, I ^{[1
]}

Vasileska, D

Akis, R

Kang, J

He, X

Schroder, DK

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

来源：

PHYSICA B-CONDENSED MATTER | 2002年 / 314卷 / 1-4期

关键词：

FIBMOS; quantum effects; Monte Carlo simulation; device modeling;

D O I：

10.1016/S0921-4526(01)01427-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A 250 nm focused-ion-beam MOSFET (FIBMOS) has been simulated using a two-dimensional coupled Monte Carlo-Poisson particle-based solver, in which quantum effects have been taken into account by incorporating an effective potential scheme into a classical particle simulator. Inclusion of quantum effects in the analysis of FIBMOS operation is crucial because the high doping density of the p(+)-implant leads to strong quantum confinement of carriers at the implant/oxide interface. We show that the device drive current, threshold voltage and transconductance are indeed extremely sensitive to the proper treatment of quantization. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：386 / 390

页数：5

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