Monte Carlo particle-based simulation of FIBMOS: impact of strong quantum confinement on device performance

A 250 nm focused-ion-beam MOSFET (FIBMOS) has been simulated using a two-dimensional coupled Monte Carlo-Poisson particle-based solver, in which quantum effects have been taken into account by incorporating an effective potential scheme into a classical particle simulator. Inclusion of quantum effects in the analysis of FIBMOS operation is crucial because the high doping density of the p(+)-implant leads to strong quantum confinement of carriers at the implant/oxide interface. We show that the device drive current, threshold voltage and transconductance are indeed extremely sensitive to the proper treatment of quantization. (C) 2002 Elsevier Science B.V. All rights reserved.