Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity

被引：7

作者：

Danilova, AP ^{[1
]}

Danilova, TN ^{[1
]}

Imenkov, AN ^{[1
]}

Kolchanova, NM ^{[1
]}

Stepanov, MV ^{[1
]}

Sherstnev, VV ^{[1
]}

Yakovlev, YP ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 09期

关键词：

Spatial Distribution; Charge Carrier; Model Calculation; Magnetic Material; Carrier Concentration;

D O I：

10.1134/1.1187821

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A reduction in the emission wavelength in the preferred mode of InAsSbP/InAsSb/InAsSbP heterostructure lasers by 50 Angstrom is observed when the current is raised from 1.8 to 5 times the threshold with dc and pulsed power. A comparison of the spectral and spatial distributions of the output as functions of current shows that this short-wavelength tuning is caused by a change in the distribution of the nonequilibrium charge carrier concentration over the strip width as the current is varied. This effect is modeled mathematically, taking into account the increase in the injection density and the drop in the output intensity from the middle to the sides of the waveguide. The results of the model calculation are in good agreement with experiment. (C) 1999 American Institute of Physics. [S1063- 7826(99)01609-9].

引用

页码：991 / 995

页数：5

共 50 条

[21] InAsSb/InAsSbP double-heterostructure lasers emitting at 3–4 µm: Part I
T. N. Danilova
A. N. Imenkov
V. V. Sherstnev
Yu. P. Yakovlev
Semiconductors, 2000, 34 : 1343 - 1350
[22] InAsSb/InAsSbP double-heterostructure lasers emitting in the 3–4 µm spectral range
T. N. Danilova
A. N. Imenkov
N. M. Kolchanova
Yu. P. Yakovlev
Semiconductors, 2001, 35 : 1404 - 1417
[23] High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm
Wu, D
Lane, B
Mohseni, H
Diaz, J
Razeghi, M
APPLIED PHYSICS LETTERS, 1999, 74 (09) : 1194 - 1196
[24] EFFECT OF DIFFUSION AND FLUCTUATIONS IN THE NONEQUILIBRIUM CHARGE CARRIER DENSITY ON THE ANGULAR DISTRIBUTION OF THE OUTPUT INTENSITY FOR INJECTION LASERS BASED ON AN InAsSb/InAsSbP HETEROSTRUCTURE
Burov, L. I.
Gorbatsevich, A. S.
Jadan, M.
Sherstnev, V. V.
Yakovlev, Yu. P.
JOURNAL OF APPLIED SPECTROSCOPY, 2011, 78 (05) : 733 - 737
[25] Effect of diffusion and fluctuations in the nonequilibrium charge carrier density on the angular distribution of the output intensity for injection lasers based on an InAsSb/InAsSbP heterostructure
L. I. Burov
A. S. Gorbatsevich
M. Jadan
V. V. Sherstnev
Yu. P. Yakovlev
Journal of Applied Spectroscopy, 2011, 78 : 733 - 737
[26] Fast tuning of 3.3 μm InAsSb/InAsSbP diode lasers using nonlinear optical effects
Danilova, AP
Imenkov, AN
Danilova, TN
Kolchanova, NM
Stepanov, MV
Sherstnev, VV
Yakovlev, YP
IEE PROCEEDINGS-OPTOELECTRONICS, 1998, 145 (05): : 261 - 264
[27] Fast tuning of 3.3 μm InAsSb/InAsSbP diode lasers due to nonlinear optical effects
Danilova, AP
Imenkov, AN
Danilova, TN
Kolchanova, NM
Stepanov, MV
Sherstnev, VV
Yakovlev, YP
SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 1999, 55 (10) : 2077 - 2082
[28] Short-wavelength GaInNAs semiconductor disk lasers
Calvez, S.
Hastie, J. E.
Vetter, S. L.
Dawson, M. D.
Korpijarvi, V. -M.
Puustinen, J.
Guina, M.
Okhotnikov, O.
Pessa, M.
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 1802 - +
[29] LSWAVE 2000: Lasers and short-wavelength applications
Sandner, W
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 467 (PART II): : 1458 - 1460
[30] THE APPLICATION OF SEMICONDUCTOR SUPERLATTICES TO SHORT-WAVELENGTH LASERS
BLOOD, P
FOXON, CT
FLETCHER, ED
PHILIPS TECHNICAL REVIEW, 1989, 44 (8-10): : 268 - 273

← 1 2 3 4 5 →