Morphology control of CsPbBr3 films by a surface active Lewis base for bright all-inorganic perovskite light-emitting diodes

被引:19
作者
Jin, Yan [1 ]
Yuan, Shuai [1 ]
Wang, Kai-Li [1 ]
Li, Meng [1 ]
Wang, Qiang [1 ]
Wang, Zhao-Kui [1 ]
Liao, Liang-Sheng [1 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
基金
国家重点研发计划;
关键词
PERFORMANCE; EFFICIENT;
D O I
10.1063/1.5094041
中图分类号
O59 [应用物理学];
学科分类号
摘要
All inorganic perovskites are regarded as promising candidates for light-emitting diodes (LEDs) due to their excellent luminescent properties and material stability. However, the film morphology of the perovskite emitting layer has a substantial effect on the device performance of perovskite LEDs (PeLEDs). Herein, we developed a facial method to optimize the film morphology of solution-processed CsPbBr3 films by incorporating a Lewis base of caprylyl sulfobetaine (SB3-10) into the perovskite precursor. The interaction between SB3-10 molecules and metal ions in perovskites could retard the crystallization of the CsPbBr3 film, producing a uniform film with a smooth surface morphology. In addition, the addition of SB3-10 could passivate the defects and traps in the perovskite layer to suppress the nonradiative recombination of the charge carriers. Consequently, the resulting CsPbBr3: SB3-10 based PeLEDs presented a maximum external quantum efficiency of 2.3% with a bright luminance of 23 240 cd m(-2) and a maximum current efficiency of 8.45 cd A(-1). The finding in this work provides a better understanding of the role of SB3-10 based Lewis base in controlling the surface morphology of the CsPbBr3 films. Published under license by AIP Publishing.
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页数:5
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