Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

被引:6
|
作者
Nevedomskiy, V. N. [1 ]
Bert, N. A. [1 ]
Chaldyshev, V. V. [1 ]
Preobrazhenskiy, V. V. [2 ]
Putyato, M. A. [2 ]
Semyagin, B. R. [2 ]
机构
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
基金
俄罗斯基础研究基金会;
关键词
MOLECULAR-BEAM EPITAXY;
D O I
10.1134/S1063782613090170
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180A degrees C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400-760A degrees C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600A degrees C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures.
引用
收藏
页码:1185 / 1192
页数:8
相关论文
共 50 条
  • [1] Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier
    V. N. Nevedomskiy
    N. A. Bert
    V. V. Chaldyshev
    V. V. Preobrazhenskiy
    M. A. Putyato
    B. R. Semyagin
    Semiconductors, 2013, 47 : 1185 - 1192
  • [2] Electron microscopy of GaAs Structures with InAs and as quantum dots
    V. N. Nevedomskii
    N. A. Bert
    V. V. Chaldyshev
    V. V. Preobrazhenskii
    M. A. Putyato
    B. R. Semyagin
    Semiconductors, 2011, 45 : 1580 - 1582
  • [3] Electron Microscopy of GaAs Structures with InAs and As Quantum Dots
    Nevedomskii, V. N.
    Bert, N. A.
    Chaldyshev, V. V.
    Preobrazhenskii, V. V.
    Putyato, M. A.
    Semyagin, B. R.
    SEMICONDUCTORS, 2011, 45 (12) : 1580 - 1582
  • [4] Capacitance spectroscopy of single-barrier GaAs/AlAs/GaAs structures containing InAs quantum dots
    Belyaev, AE
    Eaves, L
    Main, PC
    Polimeni, A
    Stoddart, ST
    Henini, M
    ACTA PHYSICA POLONICA A, 1998, 94 (02) : 245 - 249
  • [5] InAs quantum dots in multilayer GaAs-based heterostructures
    Pashaev, EM
    Yakunin, SN
    Zaitsev, AA
    Mokerov, VG
    Fedorov, YV
    Horvath, ZJ
    Imanov, RM
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 195 (01): : 204 - 208
  • [6] MBE growth and magnetotunnelling transport properties of a single GaAs/AlAs/GaAs barrier incorporating InAs quantum dots
    Henini, M.
    Itskevich, I.E.
    Ihn, T.
    Moriarty, P.
    Nogaret, A.
    Beton, P.H.
    Eaves, L.
    Main, P.C.
    Middleton, J.R.
    Chauhan, J.S.
    Journal of Crystal Growth, 1997, 175-176 (pt 2) : 782 - 786
  • [7] Energy spectrum of InAs quantum dots in GaAs/AlAs superlattices
    Nedzinskas, R.
    Cechavicius, B.
    Kavaliauskas, J.
    Karpus, V.
    Krivaite, G.
    Tamosiunas, V.
    Valusis, G.
    Schrey, F.
    Unterrainer, K.
    Strasser, G.
    ACTA PHYSICA POLONICA A, 2008, 113 (03) : 975 - 978
  • [8] MBE growth and magnetotunnelling transport properties of a single GaAs/AlAs/GaAs barrier incorporating InAs quantum dots
    Henini, M
    Itskevich, IE
    Ihn, T
    Moriarty, P
    Nogaret, A
    Beton, PH
    Eaves, L
    Main, PC
    Middleton, JR
    Chauhan, JS
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 782 - 786
  • [9] Electronic Structure Of InAs Quantum Dots In GaAs/AlAs Superlattice
    Nedzinskas, Ramunas
    Cechavicius, Bronislovas
    Kavaliauskas, Julius
    Karpus, Vytautas
    Seliuta, Dalius
    Tamosiunas, Vincas
    Valusis, Gintaras
    Schrey, Frederic
    Unterrainer, Karl
    Strasser, Gottfried
    PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 283 - +
  • [10] Scanning transmission electron microscopy (STEM) study of InAs/GaAs quantum dots
    Murray, R
    Malik, S
    Siverns, P
    Childs, D
    Roberts, C
    Joyce, B
    Davock, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (1B): : 496 - 499