Low voltage extrinsic switching of ferroelectric δ-PVDF ultra-thin films

被引：29

作者：

Li, Mengyuan ^{[1
]}

Katsouras, Ilias ^{[2
]}

Asadi, Kamal ^{[2
]}

Blom, Paul W. M. ^{[2
]}

de Leeuw, Dago M. ^{[2
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[2] Max Planck Inst Polymer Res, D-55128 Mainz, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 07期

关键词：

LANGMUIR-BLODGETT-FILMS; ACTIVE-MATRIX DISPLAYS; COERCIVE FIELD; TRANSISTORS; POLYMER;

D O I：

10.1063/1.4818626

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Non-volatile memories operating at low voltage are indispensable for flexible micro-electronic applications. To that end, ferroelectric delta-PVDF films were investigated as a function of layer thickness down to 10 nm ultra-thin films. Capacitors were fabricated using PEDOT:PSS as non-reactive electrode. Full polarization reversal was obtained at an unprecedented voltage below 5V. The remanent polarization of 7 mu C/cm(2) and coercive field of 120 MV/m are independent of layer thickness, demonstrating that ferroelectric switching in delta-PVDF is extrinsic, dominated by inhomogeneous nucleation and growth. The ease of processing of delta-PVDF allowed to determine a lower limit of the critical ferroelectric thickness. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 23 条

[1] Thickness dependence of switching for ferroelectric Langmuir films [J].

Blinov, LM ;

Fridkin, VM ;

Palto, SP ;

Sorokin, AV ;

Yudin, SG .

THIN SOLID FILMS, 1996, 284 :474-476

[2] A 13.56-MHz RFID system based on organic transponders [J].

Cantatore, Eugenio ;

Geuns, Thomas C. T. ;

Gelinck, Gerwin H. ;

van Veenendaal, Erik ;

Gruijthuijsen, Arnold F. A. ;

Schrijnemakers, Laurens ;

Drews, Steffen ;

de Leeuw, Dago M. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (01) :84-92

[3] Intrinsic ferroelectric coercive field [J].

Ducharme, S ;

Fridkin, VM ;

Bune, AV ;

Palto, SP ;

Blinov, LM ;

Petukhova, NN ;

Yudin, SG .

PHYSICAL REVIEW LETTERS, 2000, 84 (01) :175-178

[4] The path to ubiquitous and low-cost organic electronic appliances on plastic [J].

Forrest, SR .

NATURE, 2004, 428 (6986) :911-918

[5] FERROELECTRIC PROPERTIES OF VINYLIDENE FLUORIDE COPOLYMERS [J].

FURUKAWA, T .

PHASE TRANSITIONS, 1989, 18 (3-4) :143-211

[6] Flexible active-matrix displays and shift registers based on solution-processed organic transistors [J].

Gelinck, GH ;

Huitema, HEA ;

Van Veenendaal, E ;

Cantatore, E ;

Schrijnemakers, L ;

Van der Putten, JBPH ;

Geuns, TCT ;

Beenhakkers, M ;

Giesbers, JB ;

Huisman, BH ;

Meijer, EJ ;

Benito, EM ;

Touwslager, FJ ;

Marsman, AW ;

Van Rens, BJE ;

De Leeuw, DM .

NATURE MATERIALS, 2004, 3 (02) :106-110

[7] Impact of Confinement-Induced Cooperative Molecular Orientation Change on the Ferroelectric Size Effect in Ultrathin P(VDF-TrFE) Films [J].

Guo, Dong ;

Setter, Nava .

MACROMOLECULES, 2013, 46 (05) :1883-1889

[8] Plastic transistors in active-matrix displays - The handling of grey levels by these large displays paves the way for electronic paper. [J].

Huitema, HEA ;

Gelinck, GH ;

van der Putten, JBPH ;

Kuijk, KE ;

Hart, CM ;

Cantatore, E ;

Herwig, PT ;

van Breemen, AJJM ;

de Leeuw, DM .

NATURE, 2001, 414 (6864) :599-599

[9] Fabrication and characterization of all-polymer, transparent ferroelectric capacitors on flexible substrates [J].

Khan, M. A. ;

Bhansali, Unnat S. ;

Alshareef, H. N. .

ORGANIC ELECTRONICS, 2011, 12 (12) :2225-2229

[10] POLARIZATION BEHAVIOR IN VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE COPOLYMER THIN-FILMS [J].

KIMURA, K ;

OHIGASHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (03) :383-387

← 1 2 3 →