Low voltage extrinsic switching of ferroelectric δ-PVDF ultra-thin films

被引：29

作者：

Li, Mengyuan ^{[1
]}

Katsouras, Ilias ^{[2
]}

Asadi, Kamal ^{[2
]}

Blom, Paul W. M. ^{[2
]}

de Leeuw, Dago M. ^{[2
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[2] Max Planck Inst Polymer Res, D-55128 Mainz, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 07期

关键词：

LANGMUIR-BLODGETT-FILMS; ACTIVE-MATRIX DISPLAYS; COERCIVE FIELD; TRANSISTORS; POLYMER;

D O I：

10.1063/1.4818626

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Non-volatile memories operating at low voltage are indispensable for flexible micro-electronic applications. To that end, ferroelectric delta-PVDF films were investigated as a function of layer thickness down to 10 nm ultra-thin films. Capacitors were fabricated using PEDOT:PSS as non-reactive electrode. Full polarization reversal was obtained at an unprecedented voltage below 5V. The remanent polarization of 7 mu C/cm(2) and coercive field of 120 MV/m are independent of layer thickness, demonstrating that ferroelectric switching in delta-PVDF is extrinsic, dominated by inhomogeneous nucleation and growth. The ease of processing of delta-PVDF allowed to determine a lower limit of the critical ferroelectric thickness. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 23 条

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