Charge carrier dynamics and recombination in graded band gap CuIn1-xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers

被引：37

作者：

Kuciauskas, Darius ^{[1
]}

Li, Jian V. ^{[1
]}

Contreras, Miguel A. ^{[1
]}

Pankow, Joel ^{[1
]}

Dippo, Patricia ^{[1
]}

Young, Matthew ^{[1
]}

Mansfield, Lorelle M. ^{[1
]}

Noufi, Rommel ^{[1
]}

Levi, Dean ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 15期

关键词：

EFFICIENCY; LUMINESCENCE; KINETICS;

D O I：

10.1063/1.4825211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn1-xGaxSe2 (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75-230 cm(2) V-1 s(-1). Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5 x 10(15)-10(17) cm(-3). Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells. (C) 2013 AIP Publishing LLC.

引用

页数：6

共 39 条

[1] Comparison of techniques for measuring carrier lifetime in thin-film and multicrystalline photovoltaic materials [J].