Improving GaP Solar Cell Performance by Passivating the Surface Using AlxGa1-xP Epi-Layer

被引：10

作者：

Lu, Xuesong ^{[1
]}

Hao, Ruiying ^{[2
]}

Diaz, Martin ^{[1
]}

Opila, Robert L. ^{[3
]}

Barnett, Allen ^{[4
]}

机构：

[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19711 USA

[2] Crystal Solar Inc, Santa Clara, CA 95130 USA

[3] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

[4] Univ New S Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2013年 / 1卷 / 05期

关键词：

AlGaP; GaP; LPE; surface passivation; GROWTH;

D O I：

10.1109/JEDS.2013.2266410

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A good candidate for the top junction cell in a multi-junction solar cell system is the GaP solar cell because of its proper wide band gap. Here, for the first time, we passivate the front surface of these GaP solar cells with an AlGaP layer. To study the passivation effect of this layer, we design a novel growth procedure via liquid phase epitaxy. X-Ray diffraction results show that the resulting passivation epitaxial layer is of good quality. Integrated quantum efficiency measurements show an 18% increase in current due to the AlGaP. The current-voltage measurements indicate that with this AlGaP surface passivation layer, the GaP solar cell's efficiency is 2.90%. This is an improvement over previously reported results for GaP solar cells.

引用

页码：111 / 116

页数：6

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