Surface sulfurization on MBE-grown Cu(In1-x,Gax)Se2 thin films and devices

被引：16
作者：
Khatri, Ishwor [1 ]
Matsuyama, Isamu [1 ]
Yamaguchi, Hiroshi [1 ]
Fukai, Hirofumi [1 ]
Nakada, Tokio [1 ]
机构：
[1] Tokyo Univ Sci, Res Inst Sci & Technol, Photovolta Sci & Technol Res Div, Noda, Chiba 2788510, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 08期
关键词：
TIME-RESOLVED PHOTOLUMINESCENCE; CU(IN; GA)SE-2; SOLAR-CELLS; SULFUR; DITERTIARYBUTYLSULFIDE; DIFFUSION;
D O I：
10.7567/JJAP.54.08KC10
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Molecular beam epitaxy (MBE) grown Cu(In1-x,Ga-x)Se-2 (CIGS) thin films were sulfurized at temperatures of 450-550 degrees C for 30 min in a 10% H2S-N-2 mixture gas. The micro-roughness together with the S diffusion in the CIGS surfaces increased with increasing sulfurization temperature. Both near-band-edge PL intensity and decay time of the CIGS absorber layer enhanced after sulfurization. PL sub-peak around 80 meV below the main peak almost disappeared after sulfurization above 500 degrees C, which is expected due to the occupation of Se vacancies (V-se) with S. The open-circuit voltage (V-oc), hence conversion efficiency, improved after sulfurization. The photovoltaic performance of the solar cells was consistent with PL intensity. Moreover, it is found for the first time from the SIMS analysis that the Cu atoms were depleted at the surface of CIGS layer after sulfurization, which could result in the improved V-oc. (C) 2015 The Japan Society of Applied Physics
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页数：4
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