Achieving Surface Quantum Oscillations in Topological Insulator Thin Films of Bi2Se3

被引：67

作者：

Taskin, A. A. ^{[1
]}

Sasaki, Satoshi ^{[1
]}

Segawa, Kouji ^{[1
]}

Ando, Yoichi ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 41期

基金：

日本学术振兴会;

关键词：

topological insulators; bismuth selenide; molecular beam epitaxy; weak antilocalization; surface quantum oscillations; TRANSPORT; STATES;

D O I：

10.1002/adma.201201827

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-quality thin films of topological insulator Bi2Se3 grown on sapphire substrates present a long phase coherence length and allow direct observations of surface quantum oscillations. The key to achieving high mobility of surface electrons is to raise the main deposition temperature to 300-320 degrees C, which necessitates a two-step deposition procedure with the initial epilayer deposited at 110-130 degrees C.

引用

页码：5581 / 5585

页数：5

共 30 条

[1]

Altshuler B. L., 1985, ELECT ELECT INTERACT

[2]

Analytis JG, 2010, NAT PHYS, V6, P960, DOI [10.1038/nphys1861, 10.1038/NPHYS1861]

[3]

[Anonymous], 2004, HIGH RESOLUTION XRAY, DOI DOI 10.1007/978-1-4757-4050-9

[4] Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface [J].

Bansal, Namrata ;

Kim, Yong Seung ;

Edrey, Eliav ;

Brahlek, Matthew ;

Horibe, Yoichi ;

IidaD, Keiko ;

Tanimura, Makoto ;

Li, Guo-Hong ;

Feng, Tian ;

Lee, Hang-Dong ;

Gustafsson, Torgny ;

Andrei, Eva Y. ;

Oh, Seongshik .

THIN SOLID FILMS, 2011, 520 (01) :224-229

[5] Quantized Hall Effect and Shubnikov-de Haas Oscillations in Highly Doped Bi2Se3: Evidence for Layered Transport of Bulk Carriers [J].

Cao, Helin ;

Tian, Jifa ;

Miotkowski, Ireneusz ;

Shen, Tian ;

Hu, Jiuning ;

Qiao, Shan ;

Chen, Yong P. .

PHYSICAL REVIEW LETTERS, 2012, 108 (21)

[6] Tunable surface conductivity in Bi2Se3 revealed in diffusive electron transport [J].

Chen, J. ;

He, X. Y. ;

Wu, K. H. ;

Ji, Z. Q. ;

Lu, L. ;

Shi, J. R. ;

Smet, J. H. ;

Li, Y. Q. .

PHYSICAL REVIEW B, 2011, 83 (24)

[7] Molecular Beam Epitaxial Growth of Topological Insulators [J].

Chen, Xi ;

Ma, Xu-Cun ;

He, Ke ;

Jia, Jin-Feng ;

Xue, Qi-Kun .

ADVANCED MATERIALS, 2011, 23 (09) :1162-1165

[8] Superconducting proximity effect and Majorana fermions at the surface of a topological insulator [J].

Fu, Liang ;

Kane, C. L. .

PHYSICAL REVIEW LETTERS, 2008, 100 (09)

[9] Colloquium: Topological insulators [J].

Hasan, M. Z. ;

Kane, C. L. .

REVIEWS OF MODERN PHYSICS, 2010, 82 (04) :3045-3067

[10] Surface-Dominated Conduction in a 6 nm thick Bi2Se3 Thin Film [J].

He, Liang ;

Xiu, Faxian ;

Yu, Xinxin ;

Teague, Marcus ;

Jiang, Wanjun ;

Fan, Yabin ;

Kou, Xufeng ;

Lang, Murong ;

Wang, Yong ;

Huang, Guan ;

Yeh, Nai-Chang ;

Wang, Kang L. .

NANO LETTERS, 2012, 12 (03) :1486-1490

← 1 2 3 →