Micromachined force sensors using thin film nickel-chromium piezoresistors

被引:15
作者
Nadvi, Gaviraj S. [1 ]
Butler, Donald P. [1 ]
Celik-Butler, Zeynep [1 ]
Goenenli, Ismail Erkin [1 ]
机构
[1] Univ Texas Arlington, Dept Elect Engn & Nanotechnol, Res & Teaching Facil, Arlington, TX 76019 USA
关键词
1/F NOISE; SILICON; OPTIMIZATION; RESISTIVITY; DESIGN;
D O I
10.1088/0960-1317/22/6/065002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Micromachined force/tactile sensors using nickel-chromium piezoresistors have been investigated experimentally and through finite-element analysis. The force sensors were designed with a suspended aluminum oxide (Al2O3) membrane and optimally placed piezoresistors to measure the strain in the membrane when deflected with an applied force. Different devices, each with varying size and shape of both the membrane and the piezoresistors, were designed, fabricated and characterized. The piezoresistors were placed into a half-Wheatstone bridge configuration with two active and two passive nickel-chromium resistors to provide temperature drift compensation. The force sensors were characterized using a load cell and a nanopositioner to measure the sensor response with applied load. Piezoresistive gauge factors in the range of 1-5.2 have been calculated for the thin film nichrome (NiCr 80/20 wt%) from the measured results. The force sensors were calculated to have a noise equivalent force of 65-245 nN.
引用
收藏
页数:10
相关论文
共 37 条
[1]  
Ahmed M, 2012, UNPUB
[2]   LONGITUDINAL AND TRANSVERSE STRAIN SENSITIVITY OF NICHROME FILMS [J].
ANGADI, MA ;
WHITING, R .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 7 (1-2) :L1-L4
[3]  
[Anonymous], 2005, MEMS APPL
[4]   DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :72-80
[5]   Review: Semiconductor Piezoresistance for Microsystems [J].
Barlian, A. Alvin ;
Park, Woo-Tae ;
Mallon, Joseph R., Jr. ;
Rastegar, Ali J. ;
Pruitt, Beth L. .
PROCEEDINGS OF THE IEEE, 2009, 97 (03) :513-552
[6]   MEMS sensors: past, present and future [J].
Bogue, Robert .
SENSOR REVIEW, 2007, 27 (01) :7-13
[7]  
Chen S, 2008, INT CONF NANO MICRO, P351, DOI 10.1109/APSEC.2008.34
[8]   Micromachined pressure sensors: Review and recent developments [J].
Eaton, WP ;
Smith, JH .
SMART MATERIALS AND STRUCTURES, 1997, 6 (05) :530-539
[9]   Gauge factor enhancement driven by heterogeneity in thick-film resistors [J].
Grimaldi, C ;
Ryser, P ;
Strässler, S .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (01) :322-327
[10]  
Heavens O.S., 1970, THIN FILM PHYS, P110