Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films

被引：36

作者：

Van Bilzen, Bart ^{[1
]}

Homm, Pia ^{[1
]}

Dillemans, Leander ^{[1
]}

Su, Chen-Yi ^{[1
]}

Menghini, Mariela ^{[1
]}

Sousa, Marilyne ^{[2
]}

Marchiori, Chiara ^{[2
]}

Zhang, Luman ^{[3
]}

Seo, Jin Won ^{[3
]}

Locquet, Jean-Pierre ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Dept Phys & Astron, Solid State Phys & Magnetism, B-3001 Heverlee, Belgium

[2] IBM Res Lab Zurich, CH-8803 Ruschlikon, Switzerland

[3] Katholieke Univ Leuven, Dept Mat Engn, Surface & Interface Engn Mat, B-3001 Heverlee, Belgium

来源：

THIN SOLID FILMS | 2015年 / 591卷

关键词：

Vanadium dioxide; Metal-to-Insulator Treansition; Annealing; Oxidation; Molecular Beam Epitaxy; HIGH-TEMPERATURE COEFFICIENT; METAL-INSULATOR-TRANSITION; VANADIUM-OXIDE FILMS; RESISTANCE;

D O I：

10.1016/j.tsf.2015.08.036

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

VO2 thin films were produced on sapphire and silicon substrates through post-deposition ex-situ thermal treatment of V2O3 and VOx films. Thin epitaxial films of V2O3 on sapphire and amorphous VOx films on silicon substrates were grown using oxygen assisted molecular beam epitaxy. The post-deposition annealing was performed at different temperatures using an Ar flow. Structural, optical and electrical characterizations were performed to confirm the transformation of the films. The transformed films present a change in resistance across the metal to insulator transition of four orders of magnitude for annealed V2O3 on sapphire and around one order of magnitude in the case of annealed VOx on silicon. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：143 / 148

页数：6

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