Modeling of amorphous oxide semiconductor thin film transistors and subgap density of states

被引：9

作者：

Hsieh, Hsing-Hung ^{[1
,2
]}

Kamiya, Toshio ^{[3
,4
]}

Nomura, Kenji ^{[3
,4
]}

Hosono, Hideo ^{[1
,3
,4
]}

Wu, Chung-Chih ^{[5
,6
]}

机构：

[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268503, Japan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[4] Tokyo Inst Technol, Japan Sci & Technol Agcy, Frontier Collaborat Res Ctr, ERATO SORST,Midori Ku, Yokohama, Kanagawa 2268503, Japan

[5] Natl Taiwan Univ, Grad Inst Elect Engn, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[6] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III | 2008年 / 39卷

关键词：

D O I：

10.1889/1.3069372

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report a model of the carrier transport and the subgap density of states in a representative amorphous oxide semiconductor, amorphous InGaZnO4 (a-IGZO), for device simulation Of a-IGZO TFTs. Compared to hydrogenated amorphous silicon, a-IGZO exhibits much lower densities of tail states and deep gap states, leading to the small subthreshold swings and high mobilities.

引用

页码：1277 / +

页数：2

共 13 条

[1] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].