Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process

被引：14

作者：

Martin, A. ^{[1
]}

Vollertsen, R. -P. ^{[1
]}

Mitchell, A. ^{[1
]}

Traving, M. ^{[1
]}

Beckmeier, D. ^{[1
]}

Nielen, H. ^{[1
]}

机构：

[1] Infineon Technol AG, Corp Reliabil Dept, Neubiberg, Germany

来源：

MICROELECTRONICS RELIABILITY | 2016年 / 64卷

关键词：

Fast wafer level reliability; Oxide breakdown; Negative bias temperature instability; Electromigration; Ring oscilator; Test structures; Plasma induced charging damage; Hot carrier stress; Well charging; Reliability monitoring; BREAKDOWN; CHANNEL; STRESS; MODEL; BEOL; SIG;

D O I：

10.1016/j.microrel.2016.07.120

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work describes and discusses fast wafer level reliability (fWLR) Monitoring as a supporting procedure on productive wafers to achieve stringent quality requirements of automotive, medical and/or aviation applications. Examples are given for the various reliability topics: dielectrics, devices, metallisation, plasma charging with respect to required test structures, stress methods and data analysis. Application areas of fWLR are highlighted and limitations considered. Further aspects such as relevant reliability parameters, sampling strategies and out of control action plans are discussed. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：2 / 12

页数：11

共 54 条

[1] Fast wafer level reliability assessment of ultra thick oxides under impact ionization conditions [J].

Aal, A. .

2007 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2007, :117-120

[2] Unambiguous Identification of the NBTI Recovery Mechanism using Ultra-Fast Temperature Changes [J].

Aichinger, Thomas ;

Nelhiebel, Michael ;

Grasser, Tibor .

2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2, 2009, :2-+

[3] Prediction of dielectric reliability from I-V characteristics:: Poole-Frenkel conduction mechanism leading to √E model for silicon nitride MIM capacitor [J].

Allers, KH .

MICROELECTRONICS RELIABILITY, 2004, 44 (03) :411-423

[4]

[Anonymous], 2001, JESD87 JEDEC

[5]

[Anonymous], JESD28A JEDEC

[6]

[Anonymous], 2015, JESD241 JEDEC

[7]

[Anonymous], 2015, JEP159A JEDEC

[8]

[Anonymous], 2004, JESD60A JEDEC

[9]

[Anonymous], 2003, JEP119A JEDEC

[10]

[Anonymous], 2014, JP001A JEDEC

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