Minority carrier lifetime in polycrystalline silicon solar cells studied by photoassisted Kelvin probe force microscopy

被引：56
|
作者：
Takihara, Masaki [1 ]
Takahashi, Takuji [1 ]
Ujihara, Toru [2 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan
[2] Nagoya Univ, Dept Crystalline Mat Sci, Nagoya, Aichi 4648603, Japan
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期
关键词：
D O I：
10.1063/1.2957468
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have proposed a method to evaluate minority carrier lifetime through photovoltage measurements by photoassisted Kelvin probe force microscopy and have applied it to characterize a polycrystalline silicon solar cell. The results indicate that the lifetime significantly decreases in the vicinity of a grain boundary of the polycrystalline material. The photovoltage distribution around the grain boundary is also discussed by considering a contribution of both the intrinsic surface potential and the lifetime. (C) 2008 American Institute of Physics.
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页数：3
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