Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power Applications

Demands for low-power CMOS devices are still increasing. Ultralow-voltage operation of CMOS with maximum power efficiency can extend the opportunity of using the electron devices to power-conscious applications such as ubiquitous sensor network, etc. The main issues for low-power (highly efficient) operation of the modern scaled CMOS are reducing variability and enabling adaptive control of circuit performance and power consumption under the operation at voltages as low as possible. In order to solve these issues, we are developing the silicon-on-thin-buried-oxide (SOTB) transistors. We show features of the SOTB, transistor technology dedicated for ultralow-voltage (down to 0.4 V) operation, circuit design applicable for SOTB and we discuss on the performance projection and ULV application with SOTB.