Electrical and magnetic properties of La0.5Rh4Sb12 filled skutterudite synthesized at high pressure

被引：1

作者：

Ibuka, Soshi ^{[1
]}

Imai, Motoharu ^{[1
]}

Miyakawa, Masashi ^{[1
]}

Taniguchi, Takashi ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 646卷

关键词：

Semiconductors; Solid state reactions; Electronic properties; X-ray diffraction; CRYSTAL-STRUCTURE; SUPERCONDUCTIVITY; PHOSPHIDES; ANTIMONY; GROWTH;

D O I：

10.1016/j.jallcom.2015.06.141

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A filled skutterudite, La0.5Rh4Sb12, with a lattice constant of 9.284(2) angstrom was synthesized using a high-pressure technique. The electrical resistivity showed semiconducting behavior and the energy gap was estimated to be more than 0.08 eV. Magnetic susceptibility measurements indicated temperature-independent diamagnetism, which originates from Larmor diamagnetism. The electrical properties of this compound are more similar to those of the La0.5Rh4As12 semiconductor with an energy gap of 0.03 eV than to those of the La0.6Rh4P12 superconductor. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：912 / 915

页数：4

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