Design and Simulation Single stage CMOS TIA for 1.4 GHz,-27 dB MEMS SAW Resonator

被引：0

作者：

Kamarudin, Norlizawati Binti ^{[1
]}

Karim, Jamilah ^{[1
]}

机构：

[1] Univ Teknol MARA, Fac Elect Engn, Shah Alam 40450, Selangor, Malaysia

来源：

PROCEEDINGS OF THE 2017 IEEE REGIONAL SYMPOSIUM ON MICRO AND NANOELECTRONICS (RSM) | 2017年

关键词：

transimpedance amplifier; SAW Resonator; CMOS; g(m)/I-D methodology;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper present the design and simulation of low power transimpedance amplifier (TIA) for MEMS SAW resonator. The amplifier should consume low power to compensate the large resonator losses. The design was realized by using Silterra 0.18 mu m CMOS process. The designed amplifier produced 26.69 dBO gain at frequency 1.4 GHz. and consume 2.6 mW power with supply voltage, VDD 1.8 V. When integrate with MEMS SAW resonator, the system made 125.3 dB/Hz@ 1 kHz cut off frequency

引用

页码：163 / 166

页数：4

共 7 条

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