Characterization of undoped and nitrogen-doped 4H-SiC thin films by CVD from bis(trimethylsilylmethane) precursor

被引:9
|
作者
Jeong, JK [1 ]
Song, HK
Um, MY
Na, HJ
Song, IB
Kim, DH
Kim, HJ
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea
关键词
D O I
10.1149/1.1650839
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
High-quality 4H-SiC epi layers were grown on 8degrees off-axis (0001) 4H-SiC substrates by chemical vapor deposition (CVD) using a single precursor, bis(trimethylsilylmethane) at a substrate temperature of 1380degreesC. The background doping level of the undoped epi layers was reduced by adjusting of the CVD chamber pressure and Si/C ratio. As the chamber pressure decreased from 360 to 180 Torr, the carrier concentration of the undoped epi layers decreased from 6.8 x 10(16) to 2.0 x 10(16) cm(-3). Moreover, CH4 addition of 10 standard cubic centimeters per minute in the chamber at 180 Torr resulted in the reduction of the carrier concentration to 2 x 10(15) cm(-3), which can be explained by the well-known site-competition effect. The impurity incorporation effect on macrostep bunching was also discussed based on the strong correlation of atomic force microscopy topologies and impurity concentration. As the flow rate of nitrogen gas (N-2) increased, the electron concentration of the epi layers linearly increased. With variation of the N-2 flow rate, a total n-doping range from 2.0 x 10(17) to 1.0 x 10(21) cm(-3) was achieved. (C) 2004 The Electrochemical Society.
引用
收藏
页码:G252 / G256
页数:5
相关论文
共 50 条
  • [31] Characterization of 4H-SiC grown on AlN/Si(100) by CVD
    Qin, Z.
    Han, P.
    Han, T. T.
    Yan, B.
    Jiang, N.
    Xu, S.
    Shi, J.
    Zhu, J.
    Xie, Z. L.
    Xiu, X. Q.
    Gu, S. L.
    Zhang, R.
    Zheng, Y. D.
    THIN SOLID FILMS, 2006, 515 (02) : 580 - 582
  • [32] Characterization of 4H-SiC MOSFETs with NO-annealed CVD oxide
    Yano, H.
    Hatayama, T.
    Uraoka, Y.
    Fuyuki, T.
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 971 - 974
  • [33] In-situ measurement of nitrogen during growth of 4H-SiC by CVD
    Van Mil, Brenda L.
    Lew, Kok-Keong
    Myers-Ward, Rachael L.
    Holm, Ronald T.
    Gaskill, D. Kurt
    Eddy, Charles R., Jr.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 125 - +
  • [34] Growth and characterization of epitaxial GaN thin films on 4H-SiC (11.0) substrates
    Wagner, BP
    Preble, EA
    Reitmeier, ZJ
    Davis, RF
    Zakharov, DN
    Liliental-Weber, Z
    GAN AND RELATED ALLOYS - 2003, 2003, 798 : 375 - 379
  • [35] Characterization of nitrogen-doped amorphous silicon carbide thin films
    Safrankova, J
    Huran, J
    Hotovy, I
    Kobzev, AP
    Korenev, SA
    VACUUM, 1998, 51 (02) : 165 - 167
  • [36] Characterization of nitrogen-doped amorphous silicon carbide thin films
    Slovak Acad of Sciences, Bratislava, Slovakia
    Vacuum, 2 (165-167):
  • [37] Nitrogen incorporation during 4H-SiC epitaxy in a chimney CVD reactor
    Zhang, J
    Ellison, A
    Henry, A
    Linnarsson, MK
    Janzén, E
    JOURNAL OF CRYSTAL GROWTH, 2001, 226 (2-3) : 267 - 276
  • [38] Deposition of diamond films by microwave plasma CVD on 4H-SiC substrates
    Wei, Shasha
    Xie, Renqi
    Li, Yuanyou
    Meng, Jiahao
    Lin, Rongchuan
    Weng, Jianchun
    Li, Bo
    MATERIALS RESEARCH EXPRESS, 2023, 10 (12)
  • [39] Characterization of Strain Due to Nitrogen Doping Concentration Variations in Heavy Doped 4H-SiC
    Yang, Yu
    Guo, Jianqiu
    Raghothamachar, Balaji
    Chan, Xiaojun
    Kim, Taejin
    Dudley, Michael
    JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (02) : 938 - 943
  • [40] Characterization of Strain Due to Nitrogen Doping Concentration Variations in Heavy Doped 4H-SiC
    Yu Yang
    Jianqiu Guo
    Balaji Raghothamachar
    Xiaojun Chan
    Taejin Kim
    Michael Dudley
    Journal of Electronic Materials, 2018, 47 : 938 - 943