Improving yield and performance in pseudo-ternary thermoelectric alloys (Bi2Te3)(Sb2Te3)(Sb2Se3)

被引：47

作者：

Ettenberg, MH

Maddux, JR

Taylor, PJ

Jesser, WA

Rosi, FD

机构：

[1] Dept. of Mat. Sci. and Engineering, University of Virginia, Charlottesville

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 179卷 / 3-4期

关键词：

thermoelectricity; bismuth telluride; antimony telluride;

D O I：

10.1016/S0022-0248(97)00133-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thermoelectric alloys of Bi2Te3-Sb2Te3-Sb2Se3 have typically been fabricated by Bridgman growth and zone growth [1, 2]. This study showed that the method of growth does not appear to produce a significant difference in the figure of merit. However, it was found that the zone techniques can produce a higher yield of material than Bridgman techniques in both the p-and n-type material without a degradation in the high figure of merit. The maximum figure of merit for p-type alloy (Bi2Te3)(72)(Sb2Te3)(25)(Sb2Se3)(3) was found to be 3.6x10(-3)K(-1) and for the n-type (Bi2Te3)(90)(Sb2Te3)(5)(Sb2Se3)(5), 3.2 x 10(-3)K(-1) [1].

引用

页码：495 / 502

页数：8

共 15 条

[1] THERMOELECTRIC PROPERTIES OF NON-STOICHIOMETRIC BISMUTH-ANTIMONY-TELLURIDE ALLOYS
BERGVALL, P
BECKMAN, O
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 133 - 136
[2] Cadoff I. B., 1960, THERMOELECTRIC MAT D
[3] CONN JB, 1961, ADV ENERG CONVERS, V1, P119
[4] DAY G, 1987, THESIS U VIRGINIA
[5] THE USE OF SEMICONDUCTORS IN THERMOELECTRIC REFRIGERATION
GOLDSMID, HJ
DOUGLAS, RW
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1954, 5 (NOV): : 386 - 390
[6] Heikes RR., 1961, Thermoelectricity: Science and Engineering
[7] HUST JG, 1988, P 17 INT THERM COND
[8] Ioffe A. F., 1957, SEMICONDUCTOR THERMO
[9] IVANOVA LD, 1991, THERMOELECTRIC PROPE, V2, P193
[10] ELECTRICAL AND THERMOELECTRICAL PROPERTIES OF UNDOPED BI2TE3-SB2TE3 AND BI2TE3-SB2TE3-SB2SE3 SINGLE-CRYSTALS
JEON, HW
HA, HP
HYUN, DB
SHIM, JD
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1991, 52 (04) : 579 - 585

← 1 2 →