Measurement of the non-radiative minority recombination lifetime and the effective radiative recombination coefficient in GaAs

被引：19
|
作者：
Niemeyer, M. [1 ]
Kleinschmidt, P. [2 ]
Walker, A. W. [3 ]
Mundt, L. E. [1 ]
Timm, C. [2 ]
Lang, R. [1 ]
Hannappel, T. [2 ]
Lackner, D. [1 ]
机构：
[1] Fraunhofer Inst Solar Energy Syst, ISE, Heidenhofstr 2, D-79110 Freiburg, Germany
[2] Tech Univ Ilmenau, Inst Phys, D-98693 Ilmenau, Germany
[3] Natl Res Council Canada, 1200 Montreal Rd,M-50, Ottawa, ON K1A 0R6, Canada
来源：
AIP ADVANCES | 2019年 / 9卷 / 04期
关键词：
BAND-GAP; HIGH DOPANT; ABSORPTION; EMISSION; ARSENIDE;
D O I：
10.1063/1.5051709
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The combination of time-resolved (TR) and power-dependent relative (PDR) photoluminescence (PL) measurements reveals the possibility of separating the radiative and non-radiative minority carrier lifetimes and measuring the sample-dependent effective radiative recombination coefficient in direct bandgap semiconductors. To demonstrate the method, measurements on 2 mu m thick p-type GaAs double-hetero structures were conducted for various doping concentrations in the range of 5x10(16) and 1x10(18) cm(-3). With a photon recycling factor of 0.76 +/- 0.04 the radiative recombination coefficient was determined to be (3.3 +/- 0.6) x 10(-10) cm(3)s(-1) for the structures with a doping concentration below 1*10(18) cm(-3), whereas the effective radiative recombination parameter for an absorber thickness of 2 mu m was directly measured to be (0.78 +/- 0.07) x 10(-10) cm(3)s(-1). For a doping concentration of 1 x 10(18) cm(-3), the radiative recombination coefficient decreases significantly probably due to the degeneracy of the semiconductor. (C) 2019 Author(s).
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页数：7
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