Scalable Modeling of Through Silicon Vias Up to Milimeter-Wave Frequency

被引：0
作者：
Lu, Kuan-Chung [1 ]
Horng, Tzyy-Sheng [1 ]
Chen, Chi-Han [2 ]
Hung, Chang-Ying [2 ]
Lee, Pao-Nan [2 ]
Wang, Meng-Jen [2 ]
Hung, Chih-Pin [2 ]
Tong, Ho-Ming [1 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 804, Taiwan
[2] Adv Semicond Engn Inc, Res & Dev Div, Kaohsiung 811, Taiwan
来源：
2012 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING AND SYSTEMS SYMPOSIUM (EDAPS) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, measurements are made to validate the electrical performance of a Through Silicon Via (TSV) interconnection up to 40GHz, and the results of the wideband scalable model of TSV is proposed and compared with the measured data. Measurement of the TSV structure demonstrates its advantages of low parasitic capacitance and low insertion loss at high frequency.
引用
收藏
页码：168 / 171
页数：4
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