Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors

被引：35

作者：

Xiao, Y. G. ^{[1
]}

Chen, Z. J. ^{[1
]}

Tang, M. H. ^{[1
]}

Tang, Z. H. ^{[1
]}

Yan, S. A. ^{[1
]}

Li, J. C. ^{[2
]}

Gu, X. C. ^{[2
]}

Zhou, Y. C. ^{[1
]}

Ouyang, X. P. ^{[3
]}

机构：

[1] Xiangtan Univ, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Hunan, Peoples R China

[2] Natl Univ Def Technol, Sch Elect Sci & Engn, ASIC R&D Ctr, Changsha 410073, Hunan, Peoples R China

[3] NW Inst Nucl Technol, Xian 710024, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 25期

基金：

中国国家自然科学基金;

关键词：

DRAIN-CURRENT; MODEL; CHARGE; CHANNEL;

D O I：

10.1063/1.4772982

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of surrounding-gate (SG) metal-ferroelectric-semiconductor (MFS) field-effect transistors (FETs) were theoretically investigated by considering the ferroelectric negative capacitance (NC) effect. The derived results demonstrated that the NC-SG-MFS-FET displays superior electrical properties compared with that of the traditional SG-MIS-FET, in terms of better electrostatic control of the gate electrode over the channel, smaller subthreshold swing (S < 60 mV/dec), and bigger value of ION. It is expected that this investigation may provide some insight into the design and performance improvement for the fast switching and low power dissipation applications of ferroelectric FETs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772982]

引用

页数：4

共 22 条

[1]

[Anonymous], IEDM

[2]

[Anonymous], 2008, IEDM Tech Dig

[3] Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors [J].

Cho, K. H. ;

Yeo, K. H. ;

Yeoh, Y. Y. ;

Suk, S. D. ;

Li, M. ;

Lee, J. M. ;

Kim, M. -S. ;

Kim, D. -W. ;

Park, D. ;

Hong, B. H. ;

Jung, Y. C. ;

Hwang, S. W. .

APPLIED PHYSICS LETTERS, 2008, 92 (05)

[4] Multiple-gate SOI MOSFETs [J].

Colinge, JP .

SOLID-STATE ELECTRONICS, 2004, 48 (06) :897-905

[5] Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors [J].

Ferain, Isabelle ;

Colinge, Cynthia A. ;

Colinge, Jean-Pierre .

NATURE, 2011, 479 (7373) :310-316

[6] Explicit continuous model for long-channel undoped surrounding gate MOSFETs [J].

Iñíguez, B ;

Jiménez, D ;

Roig, J ;

Hamid, HA ;

Marsal, LF ;

Pallarès, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (08) :1868-1873

[7] Continuous analytic I-V model for surrounding-gate MOSFETs [J].

Jiménez, D ;

Iñíguez, B ;

Suñé, J ;

Marsal, LF ;

Pallarès, J ;

Roig, J ;

Flores, D .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (08) :571-573

[8] Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors [J].

Jimenez, David ;

Miranda, Enrique ;

Godoy, Andres .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (10) :2405-2409

[9] Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures [J].

Khan, Asif Islam ;

Bhowmik, Debanjan ;

Yu, Pu ;

Kim, Sung Joo ;

Pan, Xiaoqing ;

Ramesh, Ramamoorthy ;

Salahuddin, Sayeef .

APPLIED PHYSICS LETTERS, 2011, 99 (11)

[10]

Landau L. D., 1954, Dokl. Akad. Nauk SSSR, V96, P469

← 1 2 3 →