Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution

被引：0
|
作者：
Ciorga, M
Bryja, L
Misiewicz, J
Paszkiewicz, R
Panek, M
Paszkiewicz, B
Tlaczala, M
机构：
来源：
SOLID STATE CRYSTALS IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY | 1997年 / 3179卷
关键词：
photoluminescence; LPE; Ga - Bi solution;
D O I：
10.1117/12.276208
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Thick intentionally undoped GaAs epitaxial layers grown by LPE from Ga-Bi solution with different contents of Bi in liquid solvent (from 0% to 82% at) were studied by photoluminescence (PL) at temperature T=2K. The dependence of photoluminescence spectra on contents of Bi in solution was analysed.
引用
收藏
页码：121 / 124
页数：4
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