Conduction mechanisms in 2D and 3D SIS capacitors

被引：5
|
作者：
Jacqueline, Sebastien [1 ]
Domenges, Bernadette [2 ]
Voiron, Frederic [1 ]
Murray, Hugues [2 ]
机构：
[1] IPDIA, Caen, France
[2] PRESTO Engn Europe, UCBN, ENSICAEN,CNRS UMR6508, LAMIPS CRISMAT NXP Semicond Prestoengn Europe Lab, F-14000 Caen, France
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 04期
关键词：
POOLE-FRENKEL CONDUCTION; ELECTRICAL-CONDUCTION; DIELECTRIC-BREAKDOWN; THERMAL-OXIDATION; DIOXIDE FILMS; SILICON;
D O I：
10.1088/0268-1242/28/4/045018
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present a study of conduction mechanisms observed in high performance SIS capacitors (semiconductor-insulator-semiconductor) fabricated on bulk silicon. The combination of high aspect ratio 3D patterns and thin dielectric layers enables amazing capacitance density values. Electrical measurement and modeling of leakage currents have been associated with structural analysis in order to characterize different oxide-nitride stacks, and thus, to scale the layers and reach even higher capacitance densities. Conduction mechanisms are relevant of Fowler-Nordheim tunneling and Poole-Frenkel emission.
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收藏
页数：10
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