Evidence of hydrogen-boron interactions in diamond from deuterium diffusion and infrared spectroscopy experiments

被引：10
作者：
Chevallier, J
Lusson, A
Theys, B
Deneuville, A
Gheeraert, E
机构：
[1] CNRS, Lab Phys Solides Bellevue, F-92195 Meudon, France
[2] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble, France
来源：
DIAMOND AND RELATED MATERIALS | 1999年 / 8卷 / 2-5期
关键词：
diamond; doping; hydrogen; diffusion; infrared absorption;
D O I：
10.1016/S0925-9635(98)00326-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the first experimental evidence of hydrogen-boron interactions in boron-doped diamond. Deuterium diffusion studies in homoepitaxial B-doped diamond films reveal that hydrogen diffusion is limited by the B concentration and is characterized by a low effective diffusion activation energy. Infrared spectroscopy experiments show that boron acceptor electronic transitions disappear under hydrogenation. These results are consistent with hydrogen ionization and diffusion of fairly mobile H+ which form pairs with B-. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：278 / 282
页数：5
相关论文
共 26 条
[1]  
BRIDDON P, 1988, J PHYS C SOLID STATE, V21, pL1207
[2]   DIATOMIC-HYDROGEN-COMPLEX DIFFUSION AND SELF-TRAPPING IN CRYSTALLINE SILICON [J].
CHANG, KJ ;
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1989, 62 (08) :937-940
[3]   NEUTRALIZATION OF DEFECTS AND DOPANTS IN III-V SEMICONDUCTORS [J].
CHEVALLIER, J ;
CLERJAUD, B ;
PAJOT, B .
SEMICONDUCTORS AND SEMIMETALS, 1991, 34 (0C) :447-510
[4]  
Chevallier J., 1996, DIFFUS DE A, V131-132, P9
[5]   STATE AND MOTION OF HYDROGEN IN CRYSTALLINE SILICON [J].
DEAK, P ;
SNYDER, LC ;
CORBETT, JW .
PHYSICAL REVIEW B, 1988, 37 (12) :6887-6892
[6]   ELECTRONIC-PROPERTIES OF THE HYDROGEN-CARBON COMPLEX IN CRYSTALLINE SILICON [J].
ENDROS, AL ;
KRUHLER, W ;
KOCH, F .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (06) :2264-2271
[7]   HYDROGEN AND HYDROGEN DIMERS IN C-C, SI, GE, AND ALPHA-SN [J].
ESTREICHER, SK ;
ROBERSON, MA ;
MARIC, DM .
PHYSICAL REVIEW B, 1994, 50 (23) :17018-17027
[8]  
GHEERAERT E, 1997, SHALLOW LEVEL CTR SE, P159
[9]   THE EFFECT OF SURFACE-TREATMENT ON THE ELECTRICAL-PROPERTIES OF METAL CONTACTS TO BORON-DOPED HOMOEPITAXIAL DIAMOND FILM [J].
GROT, SA ;
GILDENBLAT, GS ;
HATFIELD, CW ;
WRONSKI, CR ;
BADZIAN, AR ;
BADZIAN, T ;
MESSIER, R .
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (02) :100-102
[10]  
HALLER EE, 1991, SEMICONDUCT SEMIMET, V34, P351
123