Solution-Processed Barium Zirconate Titanate for Pentacene-Based Thin-Film Transistor and Memory

被引：4

作者：

Adriyanto, Feri ^{[1
]}

Yang, Chih-Kai ^{[1
]}

Yang, Tsung-Yu ^{[1
]}

Wei, Chia-Yu ^{[1
,2
]}

Wang, Yeong-Her ^{[1
,2
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 10期

关键词：

Barium zirconate titanate (BZT); memory; organic thin-film transistors (OTFT); pentacene; solution-process;

D O I：

10.1109/LED.2013.2273365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pentacene-based organic thin-film transistors with solution-processed barium zirconate titanate dielectric layers are demonstrated. According to the programming/erasing operations, the devices exhibited memory characteristics, such as reversible threshold voltage shifts and nondestructive readout. In addition, the reliability of the memory devices was confirmed by data retention time and repeated switching cycles' endurance testing. In addition, the possible mechanism of the memory effect was also discussed. These results suggest that the devices could potentially be applied to nonvolatile memory applications in organic electronics.

引用

页码：1241 / 1243

页数：3

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