Leakage current in Ti/4H-SiC Schottky barrier diode

被引：19
|
作者：
Ohtsuka, K [1 ]
Matsuno, Y [1 ]
Kuroda, K [1 ]
Sugimoto, H [1 ]
Tarui, Y [1 ]
Imaizumi, M [1 ]
Takami, T [1 ]
机构：
[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan
来源：
PHYSICA B-CONDENSED MATTER | 2006年 / 376卷
关键词：
SiC power device; the Schottky barrier; interface pinning; bunching steps;
D O I：
10.1016/j.physb.2005.12.096
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The Ti/4H-SiC Schottky barrier diodes with an edge termination structure are fabricated. The low on-resistance of 3mn Omega cm(2) and low-leakage current of 10(-2) - 10(-4) A/cm(2) over 1500 V are obtained. Current-voltage characteristics are evaluated by device simulation considering metal-semiconductor interface conditions such as bunching steps and interface pinning traps. Device simulation suggests that the variation of barrier height originated from the variation of interface pinning-trap concentration influences on the leakage current. Bunching steps have an effect on the leakage current because the electric field is enhanced at the bottom of the bunching steps. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：370 / 373
页数：4
相关论文
共 50 条
  • [1] Ni, Ti/4H-SiC Schottky barrier diode
    Wang, Hao
    Bai, Song
    Chen, Gang
    Li, Zheyang
    Liu, Liuting
    Chen, Xuelan
    Shao, Kai
    Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, 2007, 27 (04): : 464 - 467
  • [2] Surface Passivation of Ti/4H-SiC Schottky Barrier Diode
    Khalid, Muhammad
    Riaz, Saira
    Naseem, Shahzad
    COMMUNICATIONS IN THEORETICAL PHYSICS, 2012, 58 (04) : 577 - 582
  • [3] Surface Passivation of Ti/4H-SiC Schottky Barrier Diode
    Muhammad Khalid
    Saira Riaz
    Shahzad Naseem
    CommunicationsinTheoreticalPhysics, 2012, 58 (10) : 577 - 582
  • [4] Influence of pinning trap in Ti/4H-SiC Schottky barrier diode
    Ohtsuka, K
    Matsuno, Y
    Hase, Y
    Sugimoto, H
    Fujihira, K
    Tarui, Y
    Imaizumi, M
    Takami, T
    Ozeki, T
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 6 (5-6) : 359 - 362
  • [5] Optimized Annealing Temperature of Ti/4H-SiC Schottky Barrier Diode
    Yun, Seung Bok
    Kim, Jeong Han
    Kang, Ye Hwan
    Lee, Jung Hoon
    Kim, Ki-Hyun
    Kim, Sung-Su
    Jung, Eun Sik
    Kang, In-Ho
    Shin, Hoon Kyu
    Yang, Chang Heon
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 17 (05) : 3406 - 3408
  • [6] Electrical characteristics of Ti/4H-SiC silicidation Schottky barrier diode
    Kinoshita, Akimasa
    Nishi, Takashi
    Ohyanagi, Takasumi
    Yatsuo, Tsutomu
    Fukuda, Kenji
    Okumura, Hajime
    Arai, Kazuo
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 643 - +
  • [7] Surface Morphology of Leakage Current Source of 4H-SiC Schottky Barrier Diode by Atomic Force Microscopy
    Katsuno, T.
    Watanabe, Y.
    Ishikawa, T.
    Fujiwara, H.
    Konishi, M.
    Morino, T.
    Endo, T.
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 375 - +
  • [8] Spectroscopic performance of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diode alpha particle detectors
    Shilpa, A.
    Singh, S.
    Murty, N. V. L. Narasimha
    JOURNAL OF INSTRUMENTATION, 2022, 17 (11)
  • [9] A 3 kV Schottky barrier diode in 4H-SiC
    Wahab, Q
    Kimoto, T
    Ellison, A
    Hallin, C
    Tuominen, M
    Yakimova, R
    Henry, A
    Bergman, JP
    Janzen, E
    APPLIED PHYSICS LETTERS, 1998, 72 (04) : 445 - 447
  • [10] 3 kV Schottky barrier diode in 4H-SiC
    Wahab, Q.
    Kimoto, T.
    Ellison, A.
    Hallin, C.
    Tuominen, M.
    Yakimova, R.
    Henry, A.
    Bergman, J.P.
    Janzen, E.
    Applied Physics Letters, 1998, 72 (04):
12345