2-D hole gas with two-subband occupation in a strained Ge channel:: Scattering mechanisms

被引：8
|
作者：
Rossner, Benjamin [1 ]
von Kanel, Hans
Chrastina, Daniel
Isella, Giovanni
Batlogg, Bertram
机构：
[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland
[2] Politecn Milan, INFM, I-22100 Como, Italy
[3] Politecn Milan, LNESS, Dipartimento Fis, I-22100 Como, Italy
来源：
THIN SOLID FILMS | 2006年 / 508卷 / 1-2期
关键词：
doping and impurity implantation; heterostructures; quantum well; epitaxial silicon;
D O I：
10.1016/j.tsf.2005.07.341
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We explore the feasibility of combining the high growth rates of the Low Energy Plasma Enhanced Chemical Vapor Deposition (LEPECVD) process with abrupt doping profiles. To this end, we compare the low-temperature magneto-transport properties of symmetrically doped and inverted Si1-xGex heterostructures. Very high mobility has been found in the inverted structure, indicative of sharp doping profiles with negligible dopant segregation. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：351 / 354
页数：4
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