Synthesis and Nonvolatile Memory Behaviors of Dioxatetraazapentacene Derivatives

被引：123

作者：

Li, Gang ^{[1
]}

Zheng, Ke ^{[2
]}

Wang, Chengyuan ^{[1
]}

Leck, Kheng Swee ^{[2
]}

Hu, Fangzhong ^{[3
,4
]}

Sun, Xiao Wei ^{[2
,5
]}

Zhang, Qichun ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 637371, Singapore

[3] Nankai Univ, State Key Lab, Tianjin 300071, Peoples R China

[4] Nankai Univ, Inst Elementalorgan Chem, Tianjin 300071, Peoples R China

[5] South Univ Sci & Technol, Shenzhen 518055, Guangdong, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2013年 / 5卷 / 14期

关键词：

synthesis; nonvolatile memory; condensation reaction; heteroacenes; bipolar resistive switching; PHYSICAL-PROPERTIES; RESISTIVE MEMORY; CRYSTAL-STRUCTURE; LARGER ACENES; HETEROACENES; PERFORMANCE; DEVICE;

D O I：

10.1021/am4023434

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Two novel heteroacenes 2,3,9,10-tetra(furan-2-yl)-1,4,8,11-tetraaza-6,13-dioxapentacene (FAOP, 1) and 2,3,9,10-tetra(thiophen-2-yl)-1,4,8,11-tetraaza-6,13-dioxapentacene (TAOP, 2) was successfully synthesized through a onestep condensation reaction, which have been fully characterized by H-1 NMR (nuclear magnetic resonance), C-13 NMR, (Fourier transform infrared spectroscopy), and HRMS (high-resolution mass spectrum). The sandwich-structure memory devices have been fabricated using FAOP (1) and TAOP (2) as active layers, showing a typical bipolar resistive switching (RS) behavior in positive and negative regions.

引用

页码：6458 / 6462

页数：5

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