Three-dimensional investigations of electrical barriers using electron beam induced current measurements

被引:8
作者
Gaevski, M
Elfwing, M
Olsson, E
Kvist, A
机构
[1] Uppsala Univ, Dept Mat Sci, Angstrom Lab, SE-75121 Uppsala, Sweden
[2] Chalmers, SE-41296 Gothenburg, Sweden
关键词
D O I
10.1063/1.1432124
中图分类号
O59 [应用物理学];
学科分类号
摘要
3D-investigations of electrically active interfaces in ZnO varistor materials have been performed using electron beam induced current (EBIC) contrast in the scanning electron microscope in combination with the focused ion beam workstation (FIB). The EBIC measurements were performed with spatial resolution better than 100 nm and the depth dependence of the signal was studied by variation of the acceleration voltage. The FIB was used for characterization of the subsurface geometry of electrically active grain boundaries. Experimental EBIC profiles, obtained by scanning the electron beam across grain boundaries, were compared with computer simulations using three different models for the electron-hole generation function. The EBIC contrast has been found to depend strongly on the geometric properties, i.e., the tilt of the grain boundary, and on asymmetries in the depletion region at the boundary. Calculations of the EBIC contrast taking these two effects into account show good agreement with experimental data. The "hot electron effect" close to the electrical breakdown voltage has been experimentally observed. The possibility to study asymmetry in the depletion region and the influence of the applied bias on the electrical properties of individual interfaces using the EBIC technique has been demonstrated. (C) 2002 American Institute of Physics.
引用
收藏
页码:2713 / 2724
页数:12
相关论文
共 21 条
[1]   SEM EBIC INVESTIGATIONS OF ZNO VARISTOR CERAMICS [J].
BERNDS, A ;
LOHNERT, K ;
KUBALEK, E .
JOURNAL DE PHYSIQUE, 1984, 45 (NC-2) :861-864
[2]   CARRIER TRANSPORT THROUGH GRAIN-BOUNDARIES IN SEMICONDUCTORS [J].
BLATTER, G ;
GREUTER, F .
PHYSICAL REVIEW B, 1986, 33 (06) :3952-3966
[3]   Quantitative interpretation of electron-beam-induced current grain boundary contrast profiles with application to silicon [J].
Corkish, R ;
Puzzer, T ;
Sproul, AB ;
Luke, KL .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) :5473-5481
[5]   DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].
EVERHART, TE ;
HOFF, PH .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5837-&
[6]   ELECTRON PENETRATION AND ENERGY-TRANSFER IN SOLID TARGETS [J].
FITTING, HJ ;
GLAEFEKE, H ;
WILD, W .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 43 (01) :185-190
[7]  
GAEVSKI ME, 1999, P 51 ANN M SCAND SOC, P35
[8]   ELECTRICAL-PROPERTIES OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE COMPOUND SEMICONDUCTORS [J].
GREUTER, F ;
BLATTER, G .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (02) :111-137
[9]  
Holt DB, 2000, SCANNING, V22, P28, DOI 10.1002/sca.4950220106
[10]   PENETRATION AND ENERGY-LOSS THEORY OF ELECTRONS IN SOLID TARGETS [J].
KANAYA, K ;
OKAYAMA, S .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) :43-&