4-Contact structure of vertical-type CMOS Hall device for 3-D magnetic sensor

被引：4

作者：

Oh, Sein ^{[1
]}

Hwang, Dong-Young ^{[1
]}

Chae, Hyungil ^{[1
]}

机构：

[1] Kookmin Univ, Sch Elect Engn, 861-1 Jeongneung Dong, Seoul 136702, South Korea

来源：

IEICE ELECTRONICS EXPRESS | 2019年 / 16卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

Hall sensor; magnetic sensor; sensitivity; vertical-Hall device; 4-contact structure;

D O I：

10.1587/elex.16.20180854

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study presents a new structure of vertical-type CMOS Hall devices to detect 3-D magnetic field in various types of applications or devices with high sensitivity. For enhancement of sensitivity, a 4-contact structure instead of a conventional 3-contact or 5-contact one is adopted. A prototype of the proposed VHD is fabricated in 0.18 um CMOS process, and the sensitivity increases by 13 times which corresponds to improvement in SNR by 22.3 dB without any additional power or area. The VHD with 4 contacts can be useful in automotive applications where detection of 3-D magnetic field with high resolution is necessary.

引用

页码：1 / 8

页数：8

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