Breakdown of the integer and fractional quantum Hall states in a quantum point contact

被引：9

作者：

Dillard, C. ^{[1
]}

Lin, X. ^{[1
]}

Kastner, M. A. ^{[1
]}

Pfeiffer, L. N. ^{[2
]}

West, K. W. ^{[2
]}

机构：

[1] MIT, Dept Phys, Cambridge, MA 02139 USA

[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2013年 / 47卷

基金：

美国国家科学基金会;

关键词：

GAAS/ALGAAS HETEROSTRUCTURES; CRITICAL CURRENTS; RESISTANCE; DENSITY;

D O I：

10.1016/j.physe.2012.10.003

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The integer and fractional quantum Hall states are known to breakdown at high dc bias, exhibiting deviation from the ideal incompressible behavior. We measure breakdown of the nu=2, 3, 4, 5 integer and the nu=4/3 and 5/3 fractional states in a quantum point contact (QPC) of lithographic width similar to 600 nm. Dependence of the critical current on magnetic field, QPC gate voltage, and QPC width are presented. Of particular interest, the critical current of the 4/3 and 5/3 fractional states shows the opposite dependence on QPC width compared to the integer states. This previously unobserved result is not explained by current theories of breakdown. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：290 / 296

页数：7

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