Nano-inkjet and Its Application to Metal-Induced Crystallization of a-Si for poy-Si TFTs

被引：1

作者：

Asano, Tanemasa ^{[1
]}

Ishida, Yuji ^{[1
]}

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Nishi Ku, Fukuoka 8190395, Japan

来源：

THIN FILM TRANSISTORS 10 (TFT 10) | 2010年 / 33卷 / 05期

关键词：

AMORPHOUS-SILICON; DROPLET EJECTION; IMPRINT TECHNOLOGY; ELECTROSPRAY;

D O I：

10.1149/1.3481229

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper reviews electro-static inkjet and its application to location controlled growth of poly-crystalline Si grains for thin-film transistor application. The electro-static inkjet using a needle head enables us to draw dot patterns whose dimension is in the deep submicron region. Ejection of a Ni-nanoparticle solution using the head to the surface of a-Si produces single-grains at the printed sites as was demonstrated by Ni nano-imprint technology.

引用

页码：149 / 156

页数：8

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