Maskless Lithographic Fine Patterning on Deeply Etched or Slanted Surfaces, and Grayscale Lithography, Using Newly Developed Digital Mirror Device Lithography Equipment

被引:15
作者
Iwasaki, Wataru [1 ]
Takeshita, Toshihiro [1 ]
Peng, Yao [1 ]
Ogino, Hiroaki [2 ]
Shibata, Hiromasa [3 ]
Kudo, Yuji [3 ]
Maeda, Ryutaro [4 ]
Sawada, Renshi [1 ,5 ]
机构
[1] Kyushu Univ, Grad Sch Syst Life Sci, Fukuoka 8190395, Japan
[2] Kyushu Univ, Dept Mech & Aerosp Engn, Fukuoka 8190395, Japan
[3] Nikon Inc, Instruments Co, Yokohama, Kanagawa 2448533, Japan
[4] Natl Inst Adv Inst Sci & Technol, Res Ctr Ubiquitous MEMS & Microengn, Tsukuba, Ibaraki 3058564, Japan
[5] Kyushu Univ, Dept Intelligent Machinery & Syst, Fukuoka 8190395, Japan
基金
日本科学技术振兴机构;
关键词
SILICON; FABRICATION;
D O I
10.1143/JJAP.51.06FB05
中图分类号
O59 [应用物理学];
学科分类号
摘要
In the trial and research phases, the fabrication of micro electro mechanical systems (MEMS) devices and integrated circuits (ICs) is both lengthy and costly, owing to the demands imposed by the use of photomasks. Maskless lithography techniques, such as electron beam (EB), laser scanning, and digital mirror device (DMD) lithography techniques, are widely used. In the MEMS field, submicron and wiring patterns are often created on uneven structures. We have developed a maskless lithography technique by modifying a DMD with two automatically switchable lenses. The first lens with a magnification power of 10x and a numerical aperture (NA) of 0.3 was used to rapidly expose wide areas, and the second lens with a magnification power of 100x and an NA of 0.9 was used for fine patterning. In the present study, we fabricated submicron patterns, wiring patterns, and alignment marks on slanted and deeply etched surfaces, and three-dimensional photoresist structures using our developed DMD lithography technique. (C) 2012 The Japan Society of Applied Physics
引用
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页数:5
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