High-performance AlGaInP/GaAs light-emitting diodes with a carbon-doped GaP/indium-tin oxide contact layer

被引：4

作者：

Hsu, Shun-Chen ^{[1
]}

Wuu, Dong-Sing ^{[1
]}

Zheng, Xinhe ^{[1
]}

Horng, Ray-Hua ^{[2
]}

Su, Juh-Yuh ^{[3
]}

机构：

[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan

[2] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 40227, Taiwan

[3] Ubilux Optoelect Corp, Tainan Sci Based Ind Pk, Tainan 74145, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 09期

关键词：

GaP contact layer; AlGaInP; indium-tin oxide (ITO); light-emitting diode (LED);

D O I：

10.1143/JJAP.47.7023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An alternative heavily carbon-doped GaP (GaP:C) contact layer is demonstrated to format good ohmic contact to electronbeam-evaporation indium-tin oxide (ITO) spreading layer on the AlGaInP light-emitting diode (LED) with a GaAs absorbing substrate. The LEDs with GaP:C/ITO contact layer provide a substantial improvement in light output power over conventional structures (without GaP:C/ITO). The AlGaInP LEDs with GaP:C/ITO structures exhibited :l higher external quantum efficiency (3.24%) and larger light output power (5.9mW) under a de operation of 160mA than those of 2.01% and 1.93 mW at 120 mA for the conventional structures, showing an earlier saturation behavior of current-power characteristics. These positive results are tentatively attributed to the introduction of the GaP:C/ITO current-spreading structures in the LEDs.

引用

页码：7023 / 7025

页数：3

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