Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

被引：213
|
作者：
Zhu, Xiaojian [3 ,4 ]
Su, Wenjing [3 ,4 ]
Liu, Yiwei [3 ,4 ]
Hu, Benlin [3 ,4 ]
Pan, Liang [3 ,4 ]
Lu, Wei [1 ]
Zhang, Jiandi [2 ]
Li, Run-Wei [3 ,4 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[2] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA
[3] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn NIMTE, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China
[4] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn NIMTE, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China
来源：
ADVANCED MATERIALS | 2012年 / 24卷 / 29期
基金：
浙江省自然科学基金; 美国国家科学基金会; 中国国家自然科学基金;
关键词：
RESISTANCE; ROOM;
D O I：
10.1002/adma.201201506
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：3941 / 3946
页数：6
相关论文
共 50 条
  • [1] Conductance quantization in oxide-based resistive switching devices
    Duan, Qingxi
    Li, Jingxian
    Zhu, Jiadi
    Zhang, Teng
    Yang, Jingjing
    Yang, Yuchao
    Huang, Ru
    2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC), 2019,
  • [2] Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices
    Liu, Xinjun
    Sadaf, Sharif Md.
    Park, Sangsu
    Kim, Seonghyun
    Cha, Euijun
    Lee, Daeseok
    Jung, Gun-Young
    Hwang, Hyunsang
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (02) : 235 - 237
  • [3] Complementary resistive switching in tantalum oxide-based resistive memory devices
    Yang, Yuchao
    Sheridan, Patrick
    Lu, Wei
    APPLIED PHYSICS LETTERS, 2012, 100 (20)
  • [4] Conductance Quantization in Nonvolatile Resistive Switching Memory Based on the Polymer Composite of Zinc Oxide Nanoparticles
    Sun, Yanmei
    Wen, Dianzhong
    JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 122 (19): : 10582 - 10591
  • [5] The Statistics of Set Time of Oxide-based Resistive Switching Memory
    Zhang, Meiyun
    Long, Shibing
    Wang, Guoming
    Yu, Zhaoan
    Li, Yang
    Xu, Dinglin
    Lv, Hangbing
    Liu, Qi
    Miranda, Enrique
    Sune, Jordi
    Liu, Ming
    PROCEEDINGS OF THE 2016 IEEE 23RD INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2016, : 392 - 394
  • [6] Thermoelectric Seebeck effect in oxide-based resistive switching memory
    Wang, Ming
    Bi, Chong
    Li, Ling
    Long, Shibing
    Liu, Qi
    Lv, Hangbing
    Lu, Nianduan
    Sun, Pengxiao
    Liu, Ming
    NATURE COMMUNICATIONS, 2014, 5
  • [7] Thermoelectric Seebeck effect in oxide-based resistive switching memory
    Ming Wang
    Chong Bi
    Ling Li
    Shibing Long
    Qi Liu
    Hangbing Lv
    Nianduan Lu
    Pengxiao Sun
    Ming Liu
    Nature Communications, 5
  • [8] Mechanism for resistive switching in an oxide-based electrochemical metallization memory
    Peng, Shanshan
    Zhuge, Fei
    Chen, Xinxin
    Zhu, Xiaojian
    Hu, Benlin
    Pan, Liang
    Chen, Bin
    Li, Run-Wei
    APPLIED PHYSICS LETTERS, 2012, 100 (07)
  • [9] Modeling for multilevel switching in oxide-based bipolar resistive memory
    Hur, Ji-Hyun
    Kim, Kyung Min
    Chang, Man
    Lee, Seung Ryul
    Lee, Dongsoo
    Lee, Chang Bum
    Lee, Myoung-Jae
    Kim, Young-Bae
    Kim, Chang-Jung
    Chung, U-In
    NANOTECHNOLOGY, 2012, 23 (22)
  • [10] Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices
    Koveshnikov, Sergei
    Kononenko, Oleg
    Soltanovich, Oleg
    Kapitanova, Olesya
    Knyazev, Maxim
    Volkov, Vladimir
    Yakimov, Eugene
    NANOMATERIALS, 2022, 12 (20)
12345