Silicon Patterning Using Self-assembled PS-b-PAA Diblock Copolymer Masks for Black Silicon Fabrication via Plasma Etching

被引：9
|
作者：
Zhang, Xin [1 ]
Sushkov, Andrei B. [2 ,3 ]
Metting, Christopher J. [1 ]
Fackler, Sean [1 ]
Drew, H. Dennis [2 ,3 ]
Briber, R. M. [1 ]
机构：
[1] Univ Maryland, Dept Mat & Engn, College Pk, MD 20742 USA
[2] Univ Maryland, Mat Res Sci & Engn Ctr, College Pk, MD 20742 USA
[3] Univ Maryland, Ctr Nanophys & Adv Mat, Dept Phys, College Pk, MD 20742 USA
来源：
PLASMA PROCESSES AND POLYMERS | 2012年 / 9卷 / 10期
关键词：
antireflection; block copolymer; metamaterial; nanostructures; reactive-ion etching (RIE); BLOCK-COPOLYMER; SOLAR-CELLS; RESISTANCE; SURFACES;
D O I：
10.1002/ppap.201100198
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The poly(styrene-b-acrylic acid) diblock copolymer is utilized as a novel self-assembling mask material suitable for pattern transfer applications. This material system has high dry etch selectivity and can produce a variety of feature types and size scales. Different vertical profiles were produced by altering the etch recipes and diblock copolymer or SiO2 mask processing. This patterning technique is used to fabricate antireflective silicon metamaterials that show broadband antireflection properties in the visible and infrared wavelength range. These materials are potentially useful for solar cell and light sensing applications.
引用
收藏
页码：968 / 974
页数：7
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