Interfacial and optical properties of ZrO2/Si by reactive magnetron sputtering

被引：24

作者：

Zhu, LQ

Fang, Q

He, G

Liu, M

Zhang, LD

机构：

[1] Chinese Acad Sci, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Inst Solid State Phys, Hefei 230031, Peoples R China

[2] UCL, London WC1E 7JE, England

来源：

MATERIALS LETTERS | 2006年 / 60卷 / 07期

关键词：

dielectrics; thin films; spectroscopic ellipsometry; absorption coefficient;

D O I：

10.1016/j.matlet.2005.10.039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZrO(2) dielectric films were deposited on Si substrates by reactive magnetron sputtering technique. Interfacial and optical properties were investigated. Crystal structure was studied by X-ray diffraction. Fourier Transform Infrared Spectroscopy analysis confirmed the presence of a low-k interfacial SiO(2) layer due to the excited oxygen radicals in the sputtering plasma and the physisorbed oxygen in as-deposited ZrO(2) films. Optical constants were extracted based on the best spectroscopic ellipsometry fitting results. Absorption coefficients near the absorption edge were also calculated. The absorption tails in the range 4.5-4.75 eV indicated that there was a defect energy level below the conduction band of ZrO(2) due to oxygen vacancies. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：888 / 891

页数：4

共 20 条

[1] Studies on zirconium nitride films deposited by reactive magnetron sputtering [J].

Bhuvaneswari, HB ;

Priya, IN ;

Chandramani, R ;

Reddy, VR ;

Rao, GM .

CRYSTAL RESEARCH AND TECHNOLOGY, 2003, 38 (12) :1047-1051

[2] Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties [J].

Cho, YJ ;

Nguyen, NV ;

Richter, CA ;

Ehrstein, JR ;

Lee, BH ;

Lee, JC .

APPLIED PHYSICS LETTERS, 2002, 80 (07) :1249-1251

[3] Low-temperature growth of high-k thin films by ultraviolet-assisted pulsed laser deposition [J].

Craciun, V ;

Howard, JM ;

Bassim, ND ;

Singh, RK .

APPLIED SURFACE SCIENCE, 2000, 168 (1-4) :123-126

[4] Characterisation of HfO2 deposited by photo-induced chemical vapour deposition [J].

Fang, Q ;

Zhang, JY ;

Wang, ZM ;

Wu, JX ;

O'Sullivan, BJ ;

Hurley, RK ;

Leedham, TL ;

Davies, H ;

Audier, MA ;

Jimenez, C ;

Senateur, JP ;

Boyd, IW .

THIN SOLID FILMS, 2003, 427 (1-2) :391-396

[5] The interface between silicon and a high-k oxide [J].

Först, CJ ;

Ashman, CR ;

Schwarz, K ;

Blöchl, PE .

NATURE, 2004, 427 (6969) :53-56

[6] Slow trap response of zirconium dioxide thin films on silicon [J].

Harasek, S ;

Lugstein, A ;

Wanzenboeck, HD ;

Bertagnolli, E .

APPLIED PHYSICS LETTERS, 2003, 83 (07) :1400-1402

[7] Characterization and control of the HfO2/Si(001) interfaces [J].

Hoshino, Y ;

Kido, Y ;

Yamamoto, K ;

Hayashi, S ;

Niwa, M .

APPLIED PHYSICS LETTERS, 2002, 81 (14) :2650-2652

[8] Interfacial layer formation during high-temperature annealing of ZrO2 thin films on Si [J].

Howard, JM ;

Craciun, V ;

Essary, C ;

Singh, RK .

APPLIED PHYSICS LETTERS, 2002, 81 (18) :3431-3433

[9] Thermodynamic stability of binary oxides in contact with silicon [J].

Hubbard, KJ ;

Schlom, DG .

JOURNAL OF MATERIALS RESEARCH, 1996, 11 (11) :2757-2776

[10] Rutile-type TiO2 thin film for high-k gate insulator [J].

Kadoshima, M ;

Hiratani, M ;

Shimamoto, Y ;

Torii, K ;

Miki, H ;

Kimura, S ;

Nabatame, T .

THIN SOLID FILMS, 2003, 424 (02) :224-228

← 1 2 →