Analysis of surface photoabsorption spectra of (001) InP surfaces

被引:4
作者
Kim, YD [1 ]
Lee, TW
Hwang, H
Moon, Y
Yoon, E
Nakamura, F
机构
[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea
[2] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
[3] Seoul Natl Univ, ISRC, Seoul 151742, South Korea
[4] Sony Corp, Res Ctr, Yokohama, Kanagawa 240, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 9A期
关键词
surface photoabsorption; InP; MOCVD; in situ monitoring; P dimer; In dimer;
D O I
10.1143/JJAP.38.5033
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present an in situ surface photoabsorption (SPA) study on surface structures of (001) InP surfaces. Conventional subtraction spectra of SPA on (001) InP showed two peaks at 430 nm and 600 nm, which we assigned as P dimer and In dimer peaks, respectively. By modifying the conventional subtraction equation to separate contributions from In- and P-stabilized surfaces, we could observe another structure at 400 nm which we interpret as related to In-stabilized surface, showing possibility of complementary role of this modified equation. We also observed evolution of surface states from P- to In-stabilized surfaces at 600 degrees C by the change of PH3 partial pressure.
引用
收藏
页码:5033 / 5036
页数:4
相关论文
共 30 条
[1]   APPLICATION OF ELLIPSOMETRY TO CRYSTAL-GROWTH BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY [J].
ASPNES, DE ;
QUINN, WE ;
GREGORY, S .
APPLIED PHYSICS LETTERS, 1990, 56 (25) :2569-2571
[2]   OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001) [J].
ASPNES, DE ;
HARBISON, JP ;
STUDNA, AA ;
FLOREZ, LT .
PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1687-1690
[3]   GROWTH OF ALXGA1-XAS PARABOLIC QUANTUM-WELLS BY REAL-TIME FEEDBACK-CONTROL OF COMPOSITION [J].
ASPNES, DE ;
QUINN, WE ;
TAMARGO, MC ;
PUDENZI, MAA ;
SCHWARZ, SA ;
BRASIL, MJSP ;
NAHORY, RE ;
GREGORY, S .
APPLIED PHYSICS LETTERS, 1992, 60 (10) :1244-1246
[4]   REFLECTANCE-DIFFERENCE SPECTROSCOPY SYSTEM FOR REAL-TIME MEASUREMENTS OF CRYSTAL-GROWTH [J].
ASPNES, DE ;
HARBISON, JP ;
STUDNA, AA ;
FLOREZ, LT .
APPLIED PHYSICS LETTERS, 1988, 52 (12) :957-959
[5]   DISTINGUISHING THE AS-RICH OR GA-RICH INITIAL RECONSTRUCTION IN SHORT-PULSE SUPERSONIC NOZZLE BEAM EPITAXY OF GAAS IN REAL-TIME BY MILLISECOND TIME-RESOLVED REFLECTANCE DIFFERENCE [J].
CUI, J ;
ZHANG, S ;
TANAKA, A ;
AOYAGI, Y .
APPLIED PHYSICS LETTERS, 1995, 67 (19) :2839-2841
[6]   Optical anisotropies of InP(001) surfaces [J].
Goletti, C ;
Esser, N ;
ReschEsser, U ;
Wagner, V ;
Foeller, J ;
Pristovsek, M ;
Richter, W .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :3611-3615
[7]   Non-contact and non-destructive measurement of carrier concentration of nitrogen-doped ZnSe by reflectance difference spectroscopy [J].
Jin, CG ;
Yasuda, T ;
Kimura, K ;
Ohtake, A ;
Kuo, LH ;
Wang, TH ;
Miwa, S ;
Yao, T ;
Tanaka, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11) :6638-6644
[8]   Reflectance anisotropy spectroscopy study of the surface reconstructions of decapped InP(001) [J].
Johal, TK ;
Barrett, SD ;
Hopkinson, M ;
Weightman, P ;
Power, JR .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (01) :480-485
[9]   In situ reflectance difference spectroscopy and reflection high-energy electron diffraction observation of nitridation processes on GaAs(001) surfaces [J].
Jung, HD ;
Kumagai, N ;
Hanada, T ;
Zhu, Z ;
Yao, T ;
Yasuda, T ;
Kimura, K .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) :4684-4686
[10]   Monolayer epitaxy of GaAs at 650 degrees C by metal-organic chemical-vapor deposition with surface photoabsorption monitoring [J].
Kim, YD ;
Nakamura, F ;
Yoon, E ;
Forbes, DV ;
Coleman, JJ .
APPLIED PHYSICS LETTERS, 1996, 69 (27) :4209-4211