SiGe technology bears fruits

被引：11

作者：

Berntgen, J ^{[1
]}

Schueppen, A ^{[1
]}

Maier, P ^{[1
]}

Tortschanoff, M ^{[1
]}

Kraus, W ^{[1
]}

Averweg, M ^{[1
]}

机构：

[1] Atmel Wireless & Microcontrollers, D-74072 Heilbronn, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 89卷 / 1-3期

关键词：

SiGe; bipolar; HBT; CMOS; wireless; networking;

D O I：

10.1016/S0921-5107(01)00783-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The excellent performances of SiGe1, Atmel Wireless and Microcontrollers' 50 GHz process, have already lead to a couple of products, e.g. LNA, PA, Mixers and DACs for GSM, DCS, GPS etc. To meet all requirements for future innovative, highly sophisticated products, Atmel Wireless and Microcontrollers has developed a faster second generation of Si/SiGe bipolar technology (SiGe2). This new high-performance technology with emitter widths down to 0.5 mum allows transit frequencies f(T) and maximum frequencies of oscillation f(max) of more than 90 GHz. The maximum stable gain (MSG) at 5 GHz and the maximum available gain (MAG) at 20 GHz were determined to 22 and 11 dB, respectively. SiGe2 offers an extensive number of different devices, whereas the implementation of a 0.5 mum CMOS technology is at the development stage and will be available in near future. (C) 2002 Published by Elsevier Science B.V.

引用

页码：13 / 20

页数：8

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