Amorphous oxide semiconductor memory using high-k charge trap layer

被引：0

作者：

Rha, S. -H. ^{[1
,2
,4
]}

Jung, J. S. ^{[1
,2
]}

Kim, J. H. ^{[1
,2
]}

Kim, U. K. ^{[1
,2
]}

Chung, Y. J. ^{[1
,2
]}

Jung, H. -S ^{[1
,2
]}

Lee, S. Y. ^{[3
]}

Hwang, C. S. ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, WCU Hybrid Mat Program, Seoul 151744, South Korea

[2] Seoul Natl Univ, Inter Univ Semicond Res Ctr, Seoul 151744, South Korea

[3] Samsung Adv Inst Technol, Display Device & Proc Lab, Gyeonggido 446712, South Korea

[4] Samsung Elect Co Ltd, Semicond R& Ctr, Proc Dev Team, Gyeonggido 446712, South Korea

来源：

THIN FILM TRANSISTORS 10 (TFT 10) | 2010年 / 33卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1149/1.3481260

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Amorphous oxide semiconductor memory devices with HfInZnOx as the channel layer and high-k dielectric stacks as the charge storage medium were fabricated. HfO2 and Al2O3 and HfAlOx films were examined as the charge trap layers. The drain current - gate voltage transfer curves of the fabricated charge trap memories shows a large hysteresis due to the electron trapping and de-trapping at the interfaces between the high-k charge storage layer and the SiO2. The device structure and operational scheme for the amorphous oxide semiconductor charge trap memories were suggested based on these properties.

引用

页码：375 / 380

页数：6

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