Low-power-consumption organic field-effect transistors

被引:30
作者
Duan, Yiwei [1 ]
Zhang, Bowen [1 ]
Zou, Shizan [1 ]
Fang, Chuqi [2 ]
Wang, Qijing [1 ]
Shi, Yi [1 ]
Li, Yun [1 ]
机构
[1] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Foreign Language Sch, Nanjing 210008, Jiangsu, Peoples R China
来源
JOURNAL OF PHYSICS-MATERIALS | 2020年 / 3卷 / 01期
基金
国家教育部博士点专项基金资助; 中国博士后科学基金;
关键词
organic; consumption; low-power; field-effect transistors; THIN-FILM TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; CHEMICAL-VAPOR-DEPOSITION; LOW-VOLTAGE; HIGH-PERFORMANCE; GATE DIELECTRICS; CONTACT-RESISTANCE; HIGH-MOBILITY; HIGH-K; SEMICONDUCTOR;
D O I
10.1088/2515-7639/ab6305
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
At present, the electrical performance of organic field-effect transistors (OFETs) has reached the level of commercial amorphous silicon. OFETs show considerable application potential in artificial intelligence, deep learning algorithms, and artificial skin sensors. The devices which can operate with high performance and low power consumption are needed for these applications. The recent energy-related improvement to realize low-power consumption OFETs were reviewed, including minimizing operating voltage, reducing subthreshold swing, and decreasing contact resistance. In this review, we demonstrate breakthroughs in materials and methods to decrease power consumption, providing a promising avenue toward low-power consumption organic electronics.
引用
收藏
页数:13
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