Diffusion Behaviour of the Grain-Growth Inhibitor VC in Hardmetals

被引:14
作者
Brieseck, M. [1 ]
Huensche, I. [2 ]
Caspers, B. [2 ]
Gille, G. [2 ]
Bohn, M. [3 ]
Lengauer, W. [1 ]
机构
[1] Vienna Univ Technol, Getreidemarkt 9-164-CT, A-1060 Vienna, Austria
[2] H C Starck GmbH, D-38642 Goslar, Germany
[3] CNRS, IFREMER, F-29286 Plouzane, France
来源
DIFFUSION IN MATERIALS - DIMAT 2011 | 2012年 / 323-325卷
关键词
Hardmetals; grain-growth inhibitor; doping; vanadium carbide; tungsten carbide; diffusion couples;
D O I
10.4028/www.scientific.net/DDF.323-325.509
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Diffusion couples of the type WC-Co/VC-Co were employed to observe the diffusion behaviour of the grain-growth inhibitor (GOD VC within nano- and ultrafine-grained WC-10wt.% Co samples. Since diffusion of the GGI during heating occurs already in the solid-state regime, interrupted sintering experiments were performed up to the liquid phase formation temperatures. By the use of light-optical and scanning electron microscopy the impact of GGI concentration on the microstructure as a function of depth from the interface was investigated. Electron Probe Microanalysis (EPMA) was used in order to quantify the amount of vanadium diffused into WC-Co as a function of distance. In first approximation, an activation energy of 3.45 eV (332,6 kJ/mol) for vanadium transport was determined.
引用
收藏
页码:509 / +
页数:2
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