Self-Powered Short-Wavelength Infrared Photodetectors Composed of MXene/In 0.53 Ga0.47 As Heterostructures

被引：8

作者：

Xie, Chao ^{[1
]}

Xu, Jiyu ^{[2
]}

Wang, Yi ^{[1
]}

Yang, Wenhua ^{[1
]}

Zhao, Yuyi ^{[1
]}

Wang, Siliang ^{[1
]}

Liu, Hao ^{[2
]}

Wang, Qi ^{[2
]}

Yuan, Xueguang ^{[2
]}

Zeng, Wei ^{[1
]}

Huang, Zhixiang ^{[1
]}

机构：

[1] Anhui Univ, Sch Elect & Informat Engn, Ind Educ Res Inst Adv Mat & Technol Integrated Ci, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Anhui, Peoples R China

[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Photodetectors; Indium gallium arsenide; Detectors; Absorption; Scanning electron microscopy; Optical detectors; Lighting; Heterostructure; photodetector; self-powered; short-wavelength infrared (SWIR); two-dimensional;

D O I：

10.1109/TED.2022.3207977

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance short-wavelength infrared (SWIR) photodetectors are vital components of many optoelectronic devices with extensive uses in military and civilian domains. In this work, we report on a highly sensitive SWIR photodetector composed geometrically of a two-dimensional Ti3C2Tx MXene/three-dimensional In0.53Ga0.47 As heterostructure, which can be assembled via an easy solution processable drop-casting approach. Owing to the notable photovoltaic activity, the heterostructure can operate in self-powered mode at zero bias with /light /ldark ratio of up to wavelengths of 970, 1300, and 1550 nm, respectively. Additionally, other critical performance parameters including specific detectivity and response speed are exceeding 10 (10) Jones and 39/35 mu s, respectively. It is expected that this work will pave a facile way for developing SWIR photodetectors with good performance and low cost.

引用

页码：6201 / 6205

页数：5