Synthesis and Characterization of Ternary SnxGe1-xSe Nanocrystals

被引：22
作者：
Buckley, Jannise J.
Rabuffetti, Federico A.
Hinton, Hannah L.
Brutchey, Richard L. [1 ]
机构：
[1] Univ So Calif, Dept Chem, Los Angeles, CA 90089 USA
来源：
CHEMISTRY OF MATERIALS | 2012年 / 24卷 / 18期
基金：
美国国家科学基金会;
关键词：
tin selenide; germanium selenide; semiconductor; nanocrystal; alloy; CRYSTAL COLLOIDAL NANOSHEETS; PBSXSE1-X NANOCRYSTALS; OPTICAL-PROPERTIES; TIN(II) SELENIDE; BAND-GAP; SNSE; SNTE; TIN; PBSEXS1-X; FILMS;
D O I：
10.1021/cm3023665
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The first synthesis of ternary Sn xGe 1-xSe nanocrystals was conducted and tunable compositions throughout the entire alloy range was demonstrated. Compositional tuning of the lattice parameters, band gaps, and morphologies was demonstrated and the alloy formation mechanism was investigated. The ternary Sn xGe 1-xSe nanocrystals and the SnSe/GeSe end-members were synthesized using a di-tert-butyl diselenide precursor. Applying Kubelka-Munk functions to the reflectance spectra allowed indirect band gap transitions to be estimated, which were found to range from 0.87-1.13 eV as the composition of the Sn xGe 1-xSe nanocrystals is tuned from 1.0 - 0.2, respectively. It is apparent that SnI 4 is kinetically more reactive than GeI 4 toward the active selenium source, as evidenced by a shorter nucleation time for the SnSe nanocrystal synthesis.
引用
收藏
页码：3514 / 3516
页数：3
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