Comparative study of Junctionless and Inverted Mode FinFET for detection of breast cancer cell HS578t at microwave frequency

被引:0
作者
Sehgal, Himani Dua [1 ]
Pratap, Yogesh [2 ]
Kabra, Sneha [1 ]
机构
[1] Univ Delhi, Shaheed Rajguru Coll Appl Sci Women, Dept Instrumentat, New Delhi, India
[2] Univ Delhi, Dept Elect Sci, South Campus, New Delhi, India
来源
2022 IEEE 3RD INTERNATIONAL CONFERENCE ON VLSI SYSTEMS, ARCHITECTURE, TECHNOLOGY AND APPLICATIONS, VLSI SATA | 2022年
关键词
Breast cancer detector; HS578t; Junctionless and Inverted Mode FinFET; Dielectric constant; Microwave frequency; PERFORMANCE; MOSFET;
D O I
10.1109/VLSISATA54927.2022.10046523
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
The timely detection of invasive breast cancer cell HS578t is very important to provide early treatment to the patients suffering from this disease. Thus, in the current work detection of cancerous breast cells is performed using FinFET device. The breast cancer cell (HS578t) and healthy breast cell (MCF-10A) have variable permittivity at microwave frequency which is the basic principle utilized for sensing of these cells. Breast cancer detector is designed using Junctionless (JL) and Inverted mode (IM) FinFET and further their comparison is performed to find suitable device structure for cancer cell detection. Sensitivity is evaluated by studying the change in peak drain current, surface potential and Electric Field. The analysis of drain current sensitivity is also performed for JL and IM FinFET.
引用
收藏
页数:5
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