Low-Temperature Growth of Large-Area Heteroatom-Doped Graphene Film

被引：87

作者：

Zhang, Jia ^{[1
]}

Li, Junjie ^{[1
]}

Wang, Zhenlong ^{[1
]}

Wang, Xiaona ^{[1
]}

Feng, Wei ^{[1
]}

Zheng, Wei ^{[1
]}

Cao, Wenwu ^{[2
]}

Hu, PingAn ^{[1
]}

机构：

[1] Harbin Inst Technol, Key Lab Microsyst & Microstruct, Minist Educ, Harbin 150080, Peoples R China

[2] Harbin Inst Technol, Condensed Matter Sci & Technol Inst, Harbin 150080, Peoples R China

来源：

CHEMISTRY OF MATERIALS | 2014年 / 26卷 / 07期

基金：

中国国家自然科学基金;

关键词：

CHEMICAL-VAPOR-DEPOSITION; OXYGEN REDUCTION; RAMAN-SPECTROSCOPY; SULFUR; ELECTRODES; THICKNESS; GRAPHITE; CATALYST; COPPER; BORON;

D O I：

10.1021/cm500086j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Large-area heteroatom-doped graphene films are greatly attractive materials for various applications, such as electronics, fuel cells, and supercapacitors. Currently, these graphene films are prepared by the high-temperature chemical vapor deposition method, which produces a low doping level in N-doped graphene (NG) and fails in the synthesis of large-area S-doped graphene (SG) film. Here, we report a low-temperature method toward the synthesis of large-area heavily heteroatom-doped graphene on copper foils via a free radical reaction using polyhalogenated aromatic compounds. This low-temperature method allows the synthesis of single-layer NG film with a high nitrogen content, and the production of large-area SG film for the first time. Both doped graphenes show enhanced electrical properties in field effect transistors as well as high-performance electrocatalysts for fuel cells.

引用

页码：2460 / 2466

页数：7

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